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  54fbga Datasheet PDF File

For 54fbga Found Datasheets File :: 30    Search Time::1.657ms    
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    K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M561633G-RBF75 K4M561633G-RBG K4M561633G-RBL K4M561633G-RBN K4M561633G-RF

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M561633G-RBF75 K4M561633G-RBG K4M561633G-RBL K4M561633G-RBN K4M561633G-RF1L K4M561633G-RF75 K4M561633G-RG K4M561633G-RL K4M561633G-RN K4M561633G-RF1H K4M561633G-RL750
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 110.45K  /  12 Page

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    Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163PE-F1L K4M56163PE-BF1L0 K4M56163PE-RG1L0 K4M56163PE-BF900
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54fbga 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54

File Size 110.29K  /  12 Page

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    K4M56163PG K4M56163PG-BC75 K4M56163PG-BC90 K4M56163PG-BE90 K4M56163PG-BG75 K4M56163PG-BG90 K4M56163PG-BE1L K4M56163PG-BE

SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Ironwood Electronics
Bel Fuse, Inc.
Part No. K4M56163PG K4M56163PG-BC75 K4M56163PG-BC90 K4M56163PG-BE90 K4M56163PG-BG75 K4M56163PG-BG90 K4M56163PG-BE1L K4M56163PG-BE75 K4M56163PG-RE1L K4M56163PG-RE75 K4M56163PG-RE90 K4M56163PG-RG1L K4M56163PG-RG75 K4M56163PG-RG90 K4M56163PG-RF90 K4M56163PG-BC1L K4M56163PG-BF1L K4M56163PG-BF75 K4M56163PG-BF90 K4M56163PG-BG1L K4M56163PG-RC1L K4M56163PG-RC75 K4M56163PG-RC90 K4M56163PG-RF1L K4M56163PG-RF75 K4M56163PG-BE900 K4M56163PG-BG1L0 K4M56163PG-BC900 K4M56163PG-BC1L0 K4M56163PG-BG75T K4M56163PG-BE1L0 K4M56163PG-RE900 K4M56163PG-BE750
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 4M X 16BIT X 4 BANKS MOBILE SDRAM IN 54fbga
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54

File Size 112.18K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163LH-G K4S64163LH-F1L K4S64163LH-C K4S64163LH K4S64163LH-F1H K4S64163LH-F75 K4S64163LH-L K4S64163LH-RL1H0
OCR Text 54fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54fbga
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70

File Size 110.46K  /  12 Page

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    K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K4M511633C-RF1L K4M511633C-RF75 K4M511633C-RG K4M511633C-RBF1L K4M51163

Samsung semiconductor
Part No. K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K4M511633C-RF1L K4M511633C-RF75 K4M511633C-RG K4M511633C-RBF1L K4M511633C-RBG K4M511633C-RBN K4M511633C-RF1H K4M511633C-RL K4M511633C-RN K4M511633C-RL1H0 K4M511633C-RF1H0 K4M511633C-RN750
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54fbga

File Size 110.66K  /  12 Page

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    K4M281633H K4M281633H-RF1H K4M281633H-RF1L K4M281633H-RF75 K4M281633H-RG1H K4M281633H-RG1L K4M281633H-RG75 K4M281633H-RL

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M281633H K4M281633H-RF1H K4M281633H-RF1L K4M281633H-RF75 K4M281633H-RG1H K4M281633H-RG1L K4M281633H-RG75 K4M281633H-RL1H K4M281633H-RL1L K4M281633H-RL75 K4M281633H-RN1H K4M281633H-RN1L K4M281633H-RN75
OCR Text 54fbga FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Se...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 110.71K  /  12 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4M51163LC-RF1L K4M51163LC-RF75 K4M51163LC-RG1H K4M51163LC-RG1L K4M51163LC-RL1H K4M51163LC-RL1L K4M51163LC-RL75 K4M51163LC-RN1H K4M51163LC-RN1L K4M51163LC-BF1H K4M51163LC-BF1L K4M51163LC-BF75 K4M51163LC-BG1L K4M51163LC-BG75 K4M51163LC-BL1H K4M51163LC-BL1L K4M51163LC-BL75 K4M51163LC-BN1H K4M51163LC-BN1L K4M51163LC-BN75 K4M51163LC K4M51163LC-BG1H K4M51163LC-RN1H0 K4M51163LC-RG1H0 K4M51163LC-BG1H0 K4M51163LC-RL1H0
OCR Text 54fbga FEATURES * VDD/VDDQ = 2.5V/2.5V * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequent...
Description 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 110.48K  /  12 Page

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    K4M28163PH-RBC K4M28163PH-RBE K4M28163PH-RBF1L K4M28163PH-RBF75 K4M28163PH-RBF90 K4M28163PH-RBG K4M28163PH-RC K4M28163PH

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M28163PH-RBC K4M28163PH-RBE K4M28163PH-RBF1L K4M28163PH-RBF75 K4M28163PH-RBF90 K4M28163PH-RBG K4M28163PH-RC K4M28163PH-RE K4M28163PH-RF1L K4M28163PH-RF75 K4M28163PH-RF90 K4M28163PH-RG K4M28163PH-RG1L0 K4M28163PH-RG900
OCR Text 54fbga FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 112.23K  /  12 Page

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    K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56163LG-RN_L K4M56163LG-BN_F1H K4M56163LG-BN_F1L K4M56163LG-BN_F75 K4M56

Samsung semiconductor
Part No. K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56163LG-RN_L K4M56163LG-BN_F1H K4M56163LG-BN_F1L K4M56163LG-BN_F75 K4M56163LG-BN_G K4M56163LG-BN_L K4M56163LG-RN_F1H K4M56163LG-RN_F1L K4M56163LG-BN/F1H K4M56163LG-BN/F1L K4M56163LG-BN/F75 K4M56163LG-BN/G K4M56163LG-BN/L K4M56163LG-RN/F1H K4M56163LG-RN/F1L K4M56163LG-RN/F75 K4M56163LG-RN/G K4M56163LG-RN/L
OCR Text 54fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54fbga

File Size 110.39K  /  12 Page

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    K4M28163LH K4M28163LH-BF K4M28163LH-BF1H K4M28163LH-BF1L K4M28163LH-BF75 K4M28163LH-BG K4M28163LH-BG1H K4M28163LH-BG1L K

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M28163LH K4M28163LH-BF K4M28163LH-BF1H K4M28163LH-BF1L K4M28163LH-BF75 K4M28163LH-BG K4M28163LH-BG1H K4M28163LH-BG1L K4M28163LH-BG75 K4M28163LH-BL K4M28163LH-BL1H K4M28163LH-BL1L K4M28163LH-BL75 K4M28163LH-BN K4M28163LH-BN1H K4M28163LH-BN1L K4M28163LH-BN75 K4M28163LH-RF K4M28163LH-RF1H K4M28163LH-RF1L K4M28163LH-RF75 K4M28163LH-RG K4M28163LH-RG1H K4M28163LH-RG1L K4M28163LH-RG75 K4M28163LH-RL K4M28163LH-RL1H K4M28163LH-RL1L K4M28163LH-RL75 K4M28163LH-RN K4M28163LH-RN1H K4M28163LH-RN1L K4M28163LH-RN75
OCR Text 54fbga FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequentia...
Description Mobile SDRAM

File Size 110.76K  /  12 Page

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For 54fbga Found Datasheets File :: 30    Search Time::1.657ms    
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