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  500-1200 Datasheet PDF File

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...RENT GAIN vs. COLLECTOR CURRENT 500 VCE = 8 V hFE - DC Current Gain 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 200 100 50 20 ...1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.43K  /  7 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...RENT GAIN vs. COLLECTOR CURRENT 500 VCE = 6 V hFE - DC Current Gain 20 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 200 100 5...1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...COLLECTOR TO EMITTER VOLTAGE 30 500 VCE = 3 V IC - Collector Current - mA hFE - DC Current Gain 150 0 0.5 VBE - Base to Emitter Vo...1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...80 A 60 A 40 A 20 A 2 4 6 8 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Current Gain 200 100 50 20 10 20 10...1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SD1010

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...k 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 25C Ta=75C 80 -25C 2SD1010 IC -- VCE 120 VCE=10V IC -- VBE Collector p...1200 Ta=75C 900 25C -25C 600 150 100 300 50 0.3 1 3 10 30 100 0 0.1...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1199

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1199
OCR Text ...k 1 Transistor PC -- Ta 500 160 Ta=25C 140 400 100 25C 2SD1199 IC -- VCE 120 VCE=10V IC -- VBE Collector power dissipatio...1200 Ta=75C 900 25C -25C 600 150 100 300 50 0.3 1 3 10 30 100 0 0.1...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.38K  /  2 Page

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    2SD601A 2SD0601 2SD0601A 2SB709A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD601A 2SD0601 2SD0601A 2SB709A
OCR Text ...d current transfer ratio hFE 500 Transition frequency fT (MHz) 400 Ta=75C 25C 180 300 Noise voltage NV (mV) 240 -25C 120 120 200 80 22k 40 4.7k 100 60 0 0.1 0.3 1 3 10 30 100...
Description    Silicon NPN epitaxial planer type

File Size 37.72K  /  2 Page

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    2SD637 2SD0637

Panasonic Semiconductor
Part No. 2SD637 2SD0637
OCR Text ...k 1 Transistor PC -- Ta 500 60 Ta=25C IB=160A 50 1000 2SD637 IC -- VCE 1200 VCE=10V Ta=25C IB -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 40 Base current IB (A) 140A 120A 100A 3...
Description Silicon NPN epitaxial planer type small signal transistor

File Size 45.73K  /  3 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SD655
OCR Text ...Tj Tstg Ratings 30 15 5 0.7 1.0 500 150 -55 to +150 Unit V V V A A mW C C Electrical Characteristics (Ta = 25C) Item Collector to base b...1200 -- MHz Unit V V V A V V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = ...
Description Silicon NPN Epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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    2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D

Microsemi, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D
OCR Text ...- -- -- -- -- 350 1.6 -- -- 0.5 500 -- 0.75 0.2 -- -- V V Unit Test conditions V V A IC = 1 mA, RBE = IC = 10 A, IE = 0 VCB = 100 V, I E = ...1200 250 -- 0.75 0.2 -- -- 125 -- -- -- -- VCE(sat) Gain bandwidth product fT Collector output...
Description Silicon NPN Transistor
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|2VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
Silicon NPN Epitaxial
SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN

File Size 30.52K  /  6 Page

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