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  4 meg x 16 sdram synchronous d Datasheet PDF File

For 4 meg x 16 sdram synchronous d Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Winbond Electronics Corp
Winbond Electronics, Corp.
Part No. W981208BH-8H W981208BH-7
Description 4M x 4 BANKS x 8 BIT sdram
x8 sdram 16M x 8 synchronous dRAM, 6 ns, PdSO54
x8 sdram 16M x 8 synchronous dRAM, 5.4 ns, PdSO54

File Size 1,510.87K  /  41 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONdUCTOR CO. LTd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M464S1724dTS-C1H M464S1724dTS-L7C M464S1724dTS M464S1724dTS-C1L M464S1724dTS-C7A M464S1724dTS-C7C M464S1724dTS-L1H M464S1724dTS-L1L M464S1724dTS-L7A
Description 16Mx64 sdram SOdIMM based on 8Mx16,4Banks,4K Refresh,3.3V synchronous dRAMs with SPd 16Mx64M × 16位的SOdIMM内存BanksK的刷新,3.3V的同步dRAM的社民党
16Mx64 sdram SOdIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V synchronous dRAMs with SPd
16Mx64 sdram SOdIMM based on 8Mx164Banks4K Refresh3.3V synchronous dRAMs with SPd
16Mx64 sdram SOdIMM based on 8Mx16,4Banks,4K Refresh,3.3V synchronous dRAMs with SPd data Sheet

File Size 86.61K  /  11 Page

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    K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONdUCTOR CO. LTd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S281632d K4S281632d-L1H K4S281632d-L1L K4S281632d-L55 K4S281632d-L60 K4S281632d-L75 K4S281632d-L7C K4S281632d-NC1H K4S281632d-NC60 K4S281632d-NC75 K4S281632d-NC7C K4S281632d-NL1H K4S281632d-NL60 K4S281632d-NL75 K4S281632d-NL7C K4S281632d-TC K4S281632d-TC_L60 K4S281632d-TC75 K4S281632d-TL75 K4S281632d-TC_L1H K4S281632d-TC_L1L K4S281632d-TC_L55 K4S281632d-TC_L75 K4S281632d-TC_L7C K4S281632d-TC/L1H K4S281632d-TC/L1L K4S281632d-TC/L55 K4S281632d-TC/L60 K4S281632d-TC/L75 K4S281632d-TC/L7C K4S281632d-TL60 K4S281632d-TC7C K4S281632d-TL55 K4S281632d-TL7C
Description 128Mb sdram, 3.3V, LVTTL, 133MHz
128Mbit sdram 2M x 16Bit x 4 Banks synchronous dRAM LVTTL 128Mbit sdram00万16 × 4银行同步dRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb sdram, 3.3V, LVTTL, 166MHz
128Mb sdram, 3.3V, LVTTL, 183MHz

File Size 110.59K  /  11 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONdUCTOR CO. LTd.
Samsung Semiconductor Co., Ltd.
Part No. M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S1724CT1-L1L M464S1724CT1-L1L/C1L M464S1724CT1-L1H/C1H M464S1724CT1-C1L M464S1724CT1-C1H M464S1724CT1
Description 16Mx64 sdram SOdIMM based on 8Mx16,4Banks,4K Refresh,3.3V synchronous dRAMs with SPd data sheet
16Mx64 sdram SOdIMM based on 8Mx16,4Banks,4K Refresh,3.3V synchronous dRAMs with SPd 16Mx64M × 16位的SOdIMM内存4Banks4K的刷新,3.3V的同步dRAM的社民党
16Mx64 sdram SOdIMM based on 8Mx16,4Banks,4K Refresh,3.3V synchronous dRAMs with SPd 16Mx64M × 16位的SOdIMM内存BanksK的刷新,3.3V的同步dRAM的社民党
16M x 64 synchronous dRAM MOdULE, 6 ns, dMA144

File Size 149.06K  /  9 Page

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    Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V66841ELT-7K GM72V66841ELT-8 GM72V66841ET-7K GM72V66841Exx GM72V66841ELT-7 GM72V66841ELT-10K GM72V66841ELT-7J GM72V66841ET-7 GM72V66841ET-8 GM72V66841ET-75 GM72V66841ET-7J
Description 2,097,152 WORd x 8 BIT x 4 BANK synchronous dYNAMIC RAM
From old datasheet system
IC,sdram,4x2Mx8,CMOS,TSOP,54PIN,PLASTIC
x8 sdram x8 sdram内存

File Size 84.49K  /  10 Page

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    Samsung Electronic
Part No. M374S0823dTS
Description 8M x 64 sdram SOdIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V synchronous synchronous dRAMs with SPd data Sheet

File Size 55.83K  /  7 Page

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    HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V64162

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
Description sdram - 64Mb
4 Banks x 1M x 16Bit synchronous dRAM 4M x 16 synchronous dRAM, 6 ns, PdSO54
4 Banks x 1M x 16Bit synchronous dRAM 4M x 16 synchronous dRAM, 5 ns, PdSO54
x16 sdram x16内存
4 Banks x 1M x 16Bit synchronous dRAM 4M x 16 synchronous dRAM, 4.5 ns, PdSO54
CAP 0.01UF 50V 10% x7R SMd-0805 TR-13 PLATEd-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, dC:50V; dielectric Characteristic:x7R; Package/Case:0805; Series:MLCC; dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMd 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system

File Size 142.41K  /  12 Page

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    Fujitsu, Ltd.
Part No. MB85396A-60 MB85396A-70
Description CMOS 4M×36Bit synchronous dynamic Random Access Memory (sdram)(CMOS 4M×36同步动态RAM) 4米36Bit的CMOS同步动态随机存取存储器(sdram)的CMOS分36位同步动态RAM)的

File Size 143.75K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KMM366S1623AT-G2
Description 16M x 64 sdram dIMM
16Mx64 sdram dIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V synchronous dRAMs with SPd

File Size 809.60K  /  12 Page

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    K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC75

SAMSUNG SEMICONdUCTOR CO. LTd.
Samsung Electronics Inc
Part No. K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC75
Description Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit sdram 2M x 8Bit x 4 Banks synchronous dRAM LVTTL
IC,sdram,4x2Mx8,CMOS,TSOP,54PIN,PLASTIC

File Size 116.51K  /  11 Page

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For 4 meg x 16 sdram synchronous d Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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