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  2ghz-b Datasheet PDF File

For 2ghz-b Found Datasheets File :: 549    Search Time::1.453ms    
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    PTB20170

ERICSSON[Ericsson]
Part No. PTB20170
OCR Text ... 20170, NPN RF Transistor .185 2GHz, Microstrip 18 .195 2GHz, Microstrip 9.5 4 Turn #20 AWG, .120" I.D. 56 A SMT Inductor Ferrite Bead 33 pF ATC-B 33 pF ATC-B 0.1 F, 1206 10 pF SMT Electrolytic Capacitor 0-4 pF Johanson Variable Capacit...
Description 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

File Size 260.81K  /  5 Page

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    PTB20235

ERICSSON[Ericsson]
Part No. PTB20235
OCR Text ...TB 20235 NPN RF Transistor 0.25 2GHz Microstrip 50 0.085 2GHz Microstrip 80 0.067 2GHz Microstrip 20 0.0217 2GHz Microstrip 11.7 0.053 2...B ATC 100) 0.1 F 1206 10 F SMT Tantalum 10 SMT UT 70-50 0.031" G200, Solid Copper Bottom, AlliedSig...
Description 70 Watts 2.1-2.2 GHz Wideband CDMA Power Transistor
70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor

File Size 126.66K  /  5 Page

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    BFR193T BFR193TW

http://
Vishay Telefunken
VISAY[Vishay Siliconix]
Part No. BFR193T BFR193TW
OCR Text ... such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features D Low noise figure D High transition frequency fT = 8...B and list of transitional substances of the Montreal Protocol and the London Amendments respectivel...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 68.37K  /  4 Page

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    BFR193W Q62702-F1510

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SIEMENS[Siemens Semiconductor Group]
Part No. BFR193W Q62702-F1510
OCR Text 2GHz * For linear broadband amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling...B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitte...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)

File Size 57.01K  /  7 Page

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    BFR193 Q62702-F1218

SIEMENS[Siemens Semiconductor Group]
Part No. BFR193 Q62702-F1218
OCR Text 2GHz * For linear broadband amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling...B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 57.05K  /  7 Page

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    SSW-408 SSW408

STANFORD[Stanford Microdevices]
Part No. SSW-408 SSW408
OCR Text ...* HIgh Linearity : TOIP +55dBm @2GHz * Low DC Power Consumption * Low Insertion Loss : 1.2dB at 2GHz * Operates from Positive or Negative 3V...B i a s C o nt r o l G r o und R F o ut 1 Note 1: The switch state shown is when V1 is 3v to 8v g...
Description DC-4 GHz High Power GaAs MMIC SPDT Switch

File Size 103.63K  /  2 Page

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    FU-632SEA-3M43A FU-632SEA-3M25A FU-632SEA-6M25A FU-632SEA-6M91A FU-632SEA-3M11A FU-632SEA-3M13A FU-632SEA-3M15A FU-632SE

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. FU-632SEA-3M43A FU-632SEA-3M25A FU-632SEA-6M25A FU-632SEA-6M91A FU-632SEA-3M11A FU-632SEA-3M13A FU-632SEA-3M15A FU-632SEA-3M17A FU-632SEA-3M19A FU-632SEA-3M21A FU-632SEA-3M23A FU-632SEA-3M27A FU-632SEA-3M29A FU-632SEA-3M31A FU-632SEA-3M33A FU-632SEA-3M35A FU-632SEA-3M37A FU-632SEA-3M39A FU-632SEA-3M41A FU-632SEA-3M45A FU-632SEA-3M47A FU-632SEA-3M49A FU-632SEA-3M51A FU-632SEA-3M53A FU-632SEA-3M55A FU-632SEA-3M57A FU-632SEA-3M59A FU-632SEA-3M61A FU-632SEA-3M63A FU-632SEA-3M65A FU-632SEA-3M67A FU-632SEA-3M69A FU-632SEA-3M71A FU-632SEA-3M73A FU-632SEA-3M75A FU-632SEA-3M77A FU-632SEA-3M79A FU-632SEA-3M81A FU-632SEA-3M83A FU-632SEA-3M85A FU-632SEA-3M87A FU-632SEA-3M89A FU-632SEA-3M91A FU-632SEA-3MXXA FU-632SEA-6M11A FU-632SEA-6M13A FU-632SEA-6M15A FU-632SEA-6M17A FU-632SEA-6M19A FU-632SEA-6M21A FU-632SEA-6M23A FU-632SEA-6M27A FU-632SEA-6M29A FU-632SEA-6M31A FU-632SEA-6M33A FU-632SEA-6M35A FU-632SEA-6M37A FU-632SEA-6M39A FU-632SEA-6M41A FU-632SEA-6M43A FU-632SEA-6M45A FU-632SEA-6M47A FU-632SEA-6M49A FU-632SEA-6M51A FU-632SEA-6M53A FU-632SEA-6M55A FU-632SEA-6M57A FU-632SEA-6M59A FU-632SEA-6M61A FU-632SEA-6M63A FU-632SEA-6M65A FU-632SEA-6M67A FU-632SEA-6M69A FU-632SEA-6M71A FU-632SEA-6M73A
OCR Text ...% If=Iop,Vm=-1V If=Iop,Vm=-1V,0~2GHz If=Iop,Vm=-1V,2~3GHz If=Iop,Vm=-1V,3~5GHz Tracking error Monitor current Dark current(PD) Capacitanc...B constant of Rth Cooler current Cooler voltage Symbol Rth B Ipe Vpe Test Conditions Min. Tld=25C If...
Description Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
Replaced by PTH03020W :
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
1.55 um EAM/DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(WDM) 1.55微米EAM /半导体激光器与单模光纤尾纤(波分复用模块
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation &apos;Big Hammer&apos; Programmable ISR 27-SIP MODULE -40 to 85 1.55微米EAM /半导体激光器与单模光纤尾纤(波分复用模块
Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation &apos;Big Hammer&apos; Programmable ISR 27-SIP MODULE -40 to 85

File Size 67.84K  /  5 Page

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    BFG193 Q62702-F1291

SIEMENS[Siemens Semiconductor Group]
http://
Part No. BFG193 Q62702-F1291
OCR Text 2GHz * For linear broadband amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling...B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitte...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

File Size 48.58K  /  6 Page

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    CXG1006N

SONY[Sony Corporation]
Part No. CXG1006N
OCR Text ... = 1.5GHz VCTL (L) = 0V, f = 2GHz Item 1dB Compression Point 1dB Compression Point Symbol P1dB (3) P1dB (4) Test Condition VCTL (H) = 3V ...B 0.25 0.13 M 0.1 0.05 6.4 0.2 (0.22) (0.15) + 0.025 0.17 - 0.015 + 0.08 0.24 - 0.0...
Description High-Frequency SPDT Antenna Switch

File Size 69.74K  /  4 Page

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    HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-

Agilent (Hewlett-Packard)
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
Part No. HDH-12803CHD HDH-12806CID HDH-12810CID HDH-12820CID HDH-02003DHD HDH-09020GID HDH-03010GID HDH-01703CH HDH-09003GHD HDH-02210AI HDH-00803GHD HDH-00810GID HDH-00820GID HDH-00937CI HDH-01503GH HDH-01503GHD HDH-01510GID HDH-01520GID HDH-01530CI HDH-01537CI HDH-01703CHD HDH-01706CID HDH-01710CID HDH-01720CID HDH-01730CID HDH-02220AID HDH-02249AI HDH-03003GHD HDH-03020GID HDH-04003BH HDH-06003GHD HDH-06010GID HDH-06020GID HDH-09006GID HDH-09010GID HDCS-1000 HDCS-1100
OCR Text ...5 : 1.5GHz 017 : 1.7GHz 022 : 2.2GHz 030 : 3.0GHz 060 : 6.0GHz 090 : 9.0GHz 128 : 12.8GHz 5 Frequency Relative Bandwidth C: From 10% to below 15% G: From 30% to below 35% 6 Form I: I Type, H: H Type 7 D: With Termination Isolati...
Description Integrated CMOS Image Sensor with Digital Output and Timing Controller
Current Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:120VAC; Relay Mounting:Plug-In; Mounting Type:Plug-In; Relay Terminals:8-Pin Octal; Terminal Type:8-Pin Octal RoHS Compliant: Yes
Phase Monitoring Relay; Contacts:SPDT; Contact Carry Current:10A; Control Voltage:480V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal
Couplers with Connectors (H Type) 耦合与连接器(H型)
Couplers with Connectors (H Type) 耦合与连接器H型)
   Couplers with Connectors (H Type)

File Size 850.71K  /  8 Page

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