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200a 1200v Datasheet PDF File

For 200a 1200v Found Datasheets File :: 906 Search Time::1.562ms
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				IRF[International Rectifier]
Part No.	HFA16TB120
OCR Text	...Conditions IF = 1.0A, dif/dt = 200a/s, VR = 30V TJ = 25C TJ = 125C IF = 16A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200a/s TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameter Tlead! RthJC RthJA " RthCS# ...
Description	Ultrafast/ Soft Recovery Diode Ultrafast, Soft Recovery Diode
File Size	130.09K / 6 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5368 NTE5369
OCR Text	...5V Typical Stored Charge (ITM = 200a, drR/dt = 10A/s, VRM = 50V, 50% chord value), Qrr . . . . 25C Circuit Commutated Turn-Off Time (ITM = 200a, diR/dt = 10A/s, VRM = 50V), tq (200V/s to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . ....
Description	Silicon Controlled Rectifier (SCR) 125 Amp
File Size	18.74K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	ST180S ST180S04P0VL ST180S04P2 ST180S04P2L ST180S08P0VL ST180S08P1L ST180S20P2VL ST180S04M0 ST180S04M0L ST180S04M0V ST180S04M0VL ST180S04M1 ST180S04M1V ST180S04M1VL ST180S04M2 ST180S04M2L ST180S04M2V ST180S04M2VL ST180S04P0 ST180S04P0L ST180S04P0V ST180S04P1 ST180S04P1L ST180S04P1V ST180S04P1VL ST180S04P2V ST180S04P2VL ST180S08M0 ST180S08M0L ST180S08M0V ST180S08M0VL ST180S08M1 ST180S08M1L ST180S08M1V ST180S08M1VL ST180S08M2 ST180S08M2L ST180S08M2V ST180S08M2VL ST180S08P0 ST180S08P0L ST180S08P0V ST180S08P1 ST180S08P1V ST180S08P1VL ST180S08P2 ST180S08P2L ST180S08P2V ST180S08P2VL ST180S12M0 ST180S12M0L ST180S12M0V ST180S12M0VL ST180S12M1 ST180S12M1L ST180S12M1V ST180S12M1VL ST180S12M2 ST180S12M2L ST180S12M2V ST180S12M2VL ST180S12P0 ST180S12P0L ST180S12P0V ST180S12P0VL ST180S12P1 ST180S12P1L ST180S12P1V ST180S12P1VL ST180S12P2 ST180S12P2L ST180S12P2V ST180S12P2VL ST180S16M0 ST180S16M0L ST180S16M0V ST180S16M0VL ST180S16M1 ST180S16M1L ST180S16M1V ST180S16M1VL ST180S16M2 ST180S16M2L ST180S16M2V ST180S16M2VL ST180S16P0 ST180S16P0L ST180S16P0V ST180S16P0VL ST180S16P1 ST180S16P1L ST180S16P1V ST180S16P1VL ST180S16P2 ST180S16P2L ST180S16P2V ST180S16P2VL ST180S18M0 ST180S18M0L ST180S18M0V ST180
OCR Text	...ch as severe thermal cycling 200a Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings...1200v) None = Ceramic housing (over 1200v) 2222222222222 9 - Critical dv/dt: None = 500V/se...
Description	PHASE CONTROL THYRISTORS Stud Version
File Size	252.40K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
Part No.	M57959 M57959L
OCR Text	...ules: VCES = 600V Series (up to 200a Class) VCES = 1200v Series (up to 100A Class) VCES = 1400V Series (up to 100A Class) VIN 14 4 + 47F + 47F + VCC + VEE VCC = 15 V VEE = 10V Rext = RECOMMENDED VALUE tPLH tPHL 0 10% 13 TTL, ...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
File Size	23.82K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH50UD IRG4PH50
OCR Text	...nC TJ = 25C See Fig. 16 di/dt = 200a/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UD 30 25 F o r b o th : LOAD CURRENT (A) 20 S q u a re w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 C...
Description	1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.78V @Vge=15V Ic=24A)
File Size	226.41K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...e Fig. 880 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200v, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M57962L M57962
OCR Text	...ass) VCES = 1200v Series (up to 200a Class) VCES = 1400V Series (up to 200a Class) VIN 14 4 + 47F + 47F + VCC + VEE VCC = 15 V VEE = 10V 0 10% 13 TTL, etc. VIN = 5V tPLH tPHL 6 Rext = RECOMMENDED VALUE Se...
Description	HYBRID IC FOR DRIVING IGBT MODULES From old datasheet system
File Size	23.90K / 2 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	6MBI100S-120
OCR Text	...A ] 150 6 100 4 Ic= 200a 2 Ic= 100A Ic= 50A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz...
Description	IGBT MODULE(S series)
File Size	510.50K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-24BK QM150
OCR Text	...CAL) ton, ts, tf (s) 4 IC=200a 3 IC=150A 2 IC=100A SWITCHING TIME 10 1 7 5 4 3 2 ts 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 7 tf 5 4 3 ton 2 10 1 2 3 4 5 7 10 2 VCC=600V IB1=0.3A...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	82.55K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-24B
OCR Text	...=6.0A 2 10 1 7 5 3 2 3 IC=200a 2 IC=100A SWITCHING TIME IC=300A ton, ts, tf (s) ts 1 Tj=25C Tj=125C 0 10 -2 2 3 5 710 -12 3 5 7 10 0 2 3 5 7 10 1 10 0 7 tf 5 3 ton 2 10 -1 10 1 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	83.90K / 5 Page	View it Online	Download Datasheet

For 200a 1200v Found Datasheets File :: 906 Search Time::1.562ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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