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2.5a 1.8a Datasheet PDF File

For 2.5a 1.8a Found Datasheets File :: 7787 Search Time::6.219ms
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				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1022
OCR Text	...ion Voltage V (sat) I = 3mA Max 2.0 V BE B Thermal Resistance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 Hz M CE C I Turn on Time ton Max 2 I = 5A C Storage Time ts I =B2 5mA = Max 5Es B1 I R= 5 L Fal...
Description	Darlington Transistor(5A NPN)
File Size	273.90K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1023
OCR Text	...ion Voltage V (sat) I = 5mA Max 2.0 V BE B Thermal Resistance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 MHz CE C I Turn on Time ton Max 2 I = 3A C Storage Time ts I =B2 5mA Max 8Es B1 I= R= 10 L Fall...
Description	Darlington Transistor(5A NPN)
File Size	290.46K / 9 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1024
OCR Text	...ion Voltage V (sat) I = 6mA Max 2.0V BE B Thermal Resistance AEjc Junction to case Max 2.5 *Z/W Transition Frequency fT V = 10V, 0.8A = TYP ...5A 8A 12A 2.8 2.4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 IC = 1A 2.8 2.4 12A 2 8A 5A 3A...
Description	Darlington Transistor(8A NPN)
File Size	275.54K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1025
OCR Text	...on Voltage V (sat) I = 10mA Max 2.0V BE B Thermal Resistance AEjc Junction to case Max 2.5 *Z/W Transition Frequency fT V = 10V, 0.8A = TYP 20 MHz CE C I Turn on Time ton Max 2 I = 5A C Storage Time ts I =B2 10mA = Max 8 Es B1 I R= 5 L Fall...
Description	Darlington Transistor(8A NPN)
File Size	343.47K / 8 Page	View it Online	Download Datasheet

				Wing Shing Computer Components
Part No.	2SD850
OCR Text	2SD850 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package pr...5A; VCE = 5V IC=0.1A,VCE=10V VCB = 10V IC=3A,IB(end)=0.8A,VCC=105V IC=3A,IB(end)=0.8A,VCC=105V T...
Description	Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
File Size	187.98K / 1 Page	View it Online	Download Datasheet

				ETC ANACHIP[Anachip Corp]
Part No.	AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text	... Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 Or...5A VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-4.6A, VDS=-15V,...
Description	P-Channel 30-V (D-S) MOSFET P-Channel Enhancement Mode Power MOSFET
File Size	245.21K / 6 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	...Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications * Power Management in Notebook Computer, Portable Equipment an...5A ISD= -3A, VGS =0V : Guaranteed by design, not subject to production testing : Pulse test ; pul...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HE8050
OCR Text	...40 100 Typ. -Max. 100 100 0.5 1.2 1 500 Unit V V V nA nA V V V Test Conditions IC=100uA IC=2mA IE=100uA VCB=35V VEB=6V IC=0.8A, IB=80mA IC=0.8A, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA MH...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.35K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...5.5A, VR=20V di/dt = 100A/s 2 www.irf.com IRF3704/3704S/3704L 1000 VGS TOP 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 1000 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) 1...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...ts --- V --- V/C 12.0 13.5 m 29 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, I D = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

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