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36BGT S2003 PE4602 AU047033 IMX2510 16010 CRCW1210 S2000
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  2-diode Datasheet PDF File

For 2-diode Found Datasheets File :: 133249    Search Time::5.062ms    
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    2SD1126 2SD1126K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1126 2SD1126K
OCR Text 2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emit...diode forward current Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID...
Description Silicon NPN Triple Diffused

File Size 32.50K  /  6 Page

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    2SD401

Wing Shing Computer Compone...
WINGS[Wing Shing Computer Components]
Part No. 2SD401
OCR Text 2SD401 GENERAL DESCRIPTION SILICON EPITAXAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelop...Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.5 LIMITING VALUES ...
Description SILICON EPITAXAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

File Size 62.99K  /  1 Page

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    2SD716

Wing Shing Computer Components
Part No. 2SD716
OCR Text 2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelo...Diode forward voltage Fall time Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A 1.5 MAX 100 100 6 60 ...
Description SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

File Size 88.15K  /  1 Page

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    2SD717

Wing Shing Computer Components
Part No. 2SD717
OCR Text 2SD717 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a plastic envelo...Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB=0.4A IF = 3.5A IC=4A,IB1=-IB2=0.4A,VCC=30V ...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 87.31K  /  1 Page

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    2SD820

Wing Shing Electronics Co., (H.K.) Ltd.
Wing Shing Computer Components
Part No. 2SD820
OCR Text 2SD820 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope , p...Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 4.0A; IB = 0.8A f = 16K...
Description SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) 扩散硅功率晶体管(一般)的说

File Size 190.67K  /  1 Page

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    2SD850

Wing Shing Computer Components
Part No. 2SD850
OCR Text 2SD850 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package pr...Diode forward voltage Fall time CONDITIONS VBE = 0V TYP Tmb 25 IC = 3.0A; IB = 0.8A f = 16K...
Description Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

File Size 187.98K  /  1 Page

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    2SD862

WINGS[Wing Shing Computer Components]
Part No. 2SD862
OCR Text 2SD862 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, Low Vce(sat) middle power transistors in a...Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.5 MAX 20 20 2 10 0...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 61.80K  /  1 Page

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    2SK2764-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2764-01R
OCR Text 2SK2764-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ...Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I D...
Description N-channel MOS-FET

File Size 292.33K  /  2 Page

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    4N33 4N29 4N30 4N32 4N31

Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. 4N33 4N29 4N30 4N32 4N31
OCR Text ... DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25C Derate above 25C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16 f...
Description STANDARD THRU HOLE CASE 730A-04

File Size 286.89K  /  6 Page

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    71061 SI4831DY

http://
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ... 3 S K SO-8 A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OT...Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Pow...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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For 2-diode Found Datasheets File :: 133249    Search Time::5.062ms    
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