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Excelics Semiconductor
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| Part No. |
EPA160A
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| OCR Text |
... vds=3v, ids=4.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.6ma -11 -15 v bvgs source breakdown voltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 30 o c/w maximum ratings at 25... |
| Description |
8-12V high efficiency heterojunction power FET
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| File Size |
27.42K /
2 Page |
View
it Online |
Download Datasheet
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Excelics Semiconductor
|
| Part No. |
EPA080A
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| OCR Text |
...oltage vds=3v, ids=2.5ma -1.0 -2.5 v bvgd drain breakdown voltage igd=1.0ma -11 -15 v bvgs source breakdown voltage igs=1.0ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 55 o c/w maxim... |
| Description |
8-12V high efficiency heterojunction power FET
|
| File Size |
29.08K /
2 Page |
View
it Online |
Download Datasheet
|
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Price and Availability
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