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  1mx8 512kx16 Datasheet PDF File

For 1mx8 512kx16 Found Datasheets File :: 44    Search Time::4.437ms    
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    K5A3280YBA-T855 K5A3280YBA-T355 K5A3280YTA-T355 K5A3380YBA-T355

Fujitsu, Ltd.
Glenair, Inc.
Part No. K5A3280YBA-T855 K5A3280YBA-T355 K5A3280YTA-T355 K5A3380YBA-T355
OCR Text ...dual bank nor flash memory / 8m(1mx8/512kx16) full cmos sram the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the spec ifications and products. samsung electronics will ...
Description SPECIALTY MEMORY CIRCUIT, PBGA69 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69

File Size 572.38K  /  47 Page

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    Samsung Electronic
Part No. K5P6480YCM-T085
OCR Text ...) nand flash memory / 8m bit (1mx8/512kx16) full cmos sram revision history the attached datasheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to change the specifications. samsung ...
Description 64M Bit (8Mx8) Nand Flash Memory / Data Sheet

File Size 549.73K  /  29 Page

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    WEDPNF8M721V-XBX

White Electronic Designs Corporation
Part No. WEDPNF8M721V-XBX
OCR Text ...EATURES s User Configurable as 1mx8 or 512kx16 s Access Times of 100, 120, 150ns Discrete Approach 11.9 11.9 11.9 11.9 11.9 6.0 ACTUAL SIZE 25 22.3 48 PBGA 9.0 Note: Dimensions in millimeters 32 S A V I N G S 42% 14...
Description 8Mx72 Synchronous DRAM 8Mb Flash Mixed Module(8Mx72同步动态RAM 8M位闪速存储器混合型模 8Mx72同步DRAM 8MB闪存的混合模块(8Mx72同步动态RAM00万位闪速存储器混合型模块)

File Size 695.16K  /  42 Page

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    Fujitsu, Ltd.
Part No. K5A3280YBB-T755 K5A3280YTB-T755
OCR Text ...dual bank nor flash memory / 8m(1mx8/512kx16) full cmos sram the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the spec ifications and products. samsung electronics will ...
Description SPECIALTY MEMORY CIRCUIT, PBGA69 TBGA-69

File Size 852.72K  /  43 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K5P2880YCM
OCR Text ...) nand flash memory / 8m bit (1mx8/512kx16) full cmos sram revision history the attached datasheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to change the specifications. samsung ...
Description Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1mx8/512kx16 Full CMOS SRAM

File Size 556.18K  /  29 Page

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    WS128K64V-XG4WX WS128K64V-15G4WC WS128K64V-15G4WI WS128K64V-15G4WM WS128K64V-17G4WC WS128K64V-17G4WI WS128K64V-17G4WM WS

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. WS128K64V-XG4WX WS128K64V-15G4WC WS128K64V-15G4WI WS128K64V-15G4WM WS128K64V-17G4WC WS128K64V-17G4WI WS128K64V-17G4WM WS128K64V-20G4WC WS128K64V-20G4WI WS128K64V-20G4WM WS128K64V-25G4WC WS128K64V-25G4WI WS128K64V-25G4WM WS128K64V-15G4WX
OCR Text ...igurable as 256Kx32, 512kx16 or 1mx8. s Commercial, Industrial and Military Temperature Ranges s 3 Volt Power Supply s Low Power CMOS s 2V Data Retention Devices Available (Low Power Version) s TTL Compatible Inputs and Outputs s Built in D...
Description 128Kx64 3.3V SRAM Module(128Kx64,3.3V,静态RAM模块(存取时5ns

File Size 151.13K  /  5 Page

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    WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WED

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Part No. WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WEDPNF8M721V-1012BM WEDPNF8M721V-1015BI WEDPNF8M721V-1015BM WEDPNF8M721V-1210BC WEDPNF8M721V-1210BI WEDPNF8M721V-1210BM WEDPNF8M721V-1212BC WEDPNF8M721V-1212BI WEDPNF8M721V-1212BM WEDPNF8M721V-1215BC WEDPNF8M721V-1015BC WEDPNF8M721V-1215BI WEDPNF8M721V-1215BM
OCR Text ...S n n n n User Configurable as 1mx8 or 512kx16 Access Times of 100, 120, 150ns 3.3 Volt for Read and Write Operations 1,000,000 Erase/Program Cycles * This data sheet describes a product that may or may not be under development and is s...
Description 8Mx72 Synchronous DRAM 8Mb Flash Mixed Module Multi-Chip Package 8Mx72同步DRAM 8MB闪存的混合模块多芯片封装

File Size 1,280.17K  /  42 Page

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    ANADIGICS[ANADIGICS, Inc]
Alliance Semiconductor
Part No. AS29LV800T-90TI AS29LV800 AS29LV800B-120SC AS29LV800B-120SI AS29LV800B-120TC AS29LV800B-120TI AS29LV800B-70RSC AS29LV800B-70RSI AS29LV800B-70RTC AS29LV800B-70RTI AS29LV800B-80SC AS29LV800B-80SI AS29LV800B-80TC AS29LV800B-80TI AS29LV800B-90SC AS29LV800B-90SI AS29LV800B-90TC AS29LV800B-90TI AS29LV800T-120SC AS29LV800T-120SI AS29LV800T-120TC AS29LV800T-120TI AS29LV800T-70RSC AS29LV800T-70RSI AS29LV800T-70RTC AS29LV800T-70RTI AS29LV800T-80SC AS29LV800T-80SI AS29LV800T-80TC AS29LV800T-80TI AS29LV800T-90SC AS29LV800T-90SI AS29LV800T-90TC
OCR Text 1mx8/512kx16 * Sector architecture - One 16K; two 8K; one 32K; and fifteen 64K byte sectors - One 8K; two 4K; one 16K; and fifteen 32K word sectors - Boot code sector architecture--T (top) or B (bottom) - Erase any combination of sectors or...
Description 3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time
3V 1M】8/512K】16 CMOS Flash EEPROM
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time

File Size 234.46K  /  25 Page

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    HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29F800ATG-55I HY29F800ABG-55 HY29F800ABG-55I HY29F800ATT-90I HY29F800A H

HYNIX[Hynix Semiconductor]
Part No. HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29F800ATG-55I HY29F800ABG-55 HY29F800ABG-55I HY29F800ATT-90I HY29F800A HY29F800ABG-12 HY29F800ABG-12I HY29F800ABG-70 HY29F800ABG-70I HY29F800ABG-90 HY29F800ABG-90I HY29F800ABR-12 HY29F800ABR-12I HY29F800ABR-55 HY29F800ABR-55I HY29F800ABR-70 HY29F800ABR-70I HY29F800ABR-90 HY29F800ABR-90I HY29F800ABT-12 HY29F800ABT-12I HY29F800ABT-55 HY29F800ABT-55I HY29F800ABT-70 HY29F800ABT-70I HY29F800ABT-90 HY29F800ABT-90I HY29F800ATG-12 HY29F800ATG-12I HY29F800ATG-70 HY29F800ATG-70I HY29F800ATG-90 HY29F800ATG-90I HY29F800ATR-12 HY29F800ATR-12I HY29F800ATR-55 HY29F800ATR-55I HY29F800ATR-70 HY29F800ATR-70I HY29F800ATR-90 HY29F800ATR-90I HY29F800ATT-12 HY29F800ATT-12I HY29F800ATT-70 HY29F800ATT-70I HY29F800ATT-90
OCR Text 1mx8/512kx16), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase - Minimizes system-level power requirements n High Performance - Access times as fast as 50 ns n Low Power Consumption - 20 mA typical active read curr...
Description 8 Megabit (1mx8/512kx16), 5 Volt-only, Flash Memory

File Size 196.10K  /  40 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8100D KM23C8100DG
OCR Text ...round n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23c8100d(g) is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,...
Description 8M-Bit (1mx8 /512kx16) CMOS Mask ROM(8M1mx8 /512kx16) CMOS掩膜ROM)

File Size 41.10K  /  3 Page

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For 1mx8 512kx16 Found Datasheets File :: 44    Search Time::4.437ms    
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