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187.7. Datasheet PDF File

For 187.7. Found Datasheets File :: 76 Search Time::1.531ms
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					EPCOS
Part No.	B7676
OCR Text	... db @f carrier 1847.4 ... 1877.4 mhz a wcdma 1) 45 51 db 1884.5 ... 1919.6 mhz 40 42 db 2110.0 ... 2170.0 mhz 27 40 db 2400.0 ... 2500.0 mhz 35 41 db ...
Description	SAW Duplexer WCDMA/LTE Band IX
File Size	184.49K / 14 Page	View it Online	Download Datasheet

					Sitronix Technology Co., Ltd.
Part No.	ST7576
OCR Text	...2025.90 1988.70 1951.50 1914.30 1877.10 1839.90 1802.70 1765.50 1728.30 1665.39 1632.39 1599.39 Y 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00 293.00...
Description	66 x 102 Dot Matrix LCD Controller/Driver
File Size	882.51K / 54 Page	View it Online	Download Datasheet

					NXP Semiconductors
Part No.	BLF6G20-230PRN
OCR Text	...07.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Gp RLin D ACPR Parameter power gain input return loss drain effi...
Description	Power LDMOS transistor
File Size	41.50K / 7 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRF6S18140HR3 MRF6S18140HR309 MRF6S18140HSR3
OCR Text	...0 mA, Pout = 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.5% IM3 @ 2.5 MHz O...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	433.06K / 12 Page	View it Online	Download Datasheet

					NXP Semiconductors
Part No.	BLF6G20-230PRN10
OCR Text	...07.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol Gp RLin D ACPR Parameter power gain input return loss drain effi...
Description	Power LDMOS transistor
File Size	126.59K / 13 Page	View it Online	Download Datasheet

					Advanced Semiconductor Business Inc.
Part No.	APL1877
OCR Text	...t = 25 c, v cc = 5 v, freq. = 1877.5 mhz, 50 ohm system. features specifications 5.5 dbm output level at 1877.5 mhz channel step size : 100 khz 2 nd harmonic : < -20 dbc spurious level...
Description	PLL Module
File Size	157.28K / 1 Page	View it Online	Download Datasheet

					Ericsson Microelectronics
Part No.	PTF10153
OCR Text	...cs Morgan Hill, CA 95037 USA 1877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS...
Description	60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 60 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
File Size	103.34K / 5 Page	View it Online	Download Datasheet

					Freescale Semiconductor, Inc
Part No.	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
OCR Text	... W Avg., f = 1807.5 MHz and f = 1877.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficien...
Description	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
File Size	474.32K / 15 Page	View it Online	Download Datasheet

					EPCOS[EPCOS]
Part No.	B41868W7687M002 B41868 B41868R3228M000 B41868R3228M001 B41868R3228M002 B41868R4108M000 B41868R4108M001 B41868R4108M002 B41868R4228M000 B41868R4228M001 B41868R4228M002 B41868R4478M000 B41868R4478M001 B41868R4478M002 B41868R5108M000 B41868R5108M001 B41868R5108M002 B41868R6477M000 B41868R6477M001 B41868R6477M002 B41868W3108M000 B41868W3108M001 B41868W3108M002 B41868W3228M000 B41868W3228M001 B41868W3228M002 B41868W3337M000 B41868W3337M001 B41868W3337M002 B41868W3338M000 B41868W3338M001 B41868W3338M002 B41868W3477M000 B41868W3477M001 B41868W3477M002 B41868W3478M000 B41868W3478M001 B41868W3478M002 B41868W3568M000 B41868W3568M001 B41868W3568M002 B41868W4108M000 B41868W4108M001 B41868W4108M002 B41868W4227M000 B41868W4227M001 B41868W4227M002 B41868W4228M000 B41868W4228M001 B41868W4228M002 B41868W4337M000 B41868W4337M001 B41868W4337M002 B41868W4338M000 B41868W4338M001 B41868W4338M002 B41868W4477M000 B41868W4477M001 B41868W4477M002 B41868W5107M000 B41868W5107M001 B41868W5107M002 B41868W5108M000 B41868W5108M001 B41868W5108M002 B41868W5227M000 B41868W5227M001 B41868W5227M002 B41868W5228M000 B41868W5228M001 B41868W5337M000 B41868W5337M001 B41868W5337M002 B41868W5338M000 B41868W5338M001 B41868W53
OCR Text	...25 C below) mA 596 596 943 2065 1877 2065 2605 3254 596 596 773 1266 1301 2065 1807 2605 3254 419 596 773 943 2065 1807 2605 3254 B41868W3337M* B41868W3477M* B41868W3108M* B41868W3228M* B41868R3228M* B41868W3338M* B41868W3478M**...
Description	Long-life grade capacitors
File Size	641.18K / 24 Page	View it Online	Download Datasheet

					NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF6G20-45
OCR Text	...12.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 2 x 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit Symbol PL(AV) Gp D IMD3 ACPR Parameter average output power power ga...
Description	UHF power LDMOS transistor
File Size	37.59K / 8 Page	View it Online	Download Datasheet

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