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    IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT7

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT71342SA55J IDT71342SA55PF IDT71342SA70J IDT71342SA70PF IDT71342LA70PF IDT71342SA IDT7134 IDT71342LA70J IDT71342LA55J IDT71342LA55PF IDT71342LA35J IDT71342LA35PF IDT71342 IDT71342LA IDT71342LA20J IDT71342LA20PF IDT71342LA25J IDT71342LA25PF IDT71342LA45J IDT71342LA45PF
OCR Text ...fMAX(3) 25 25 -- -- 80 80 180 150 25 25 -- -- 80 50 180 150 25 25 -- -- 75 45 170 140 25 25 -- -- 70 40 160 130 25 25 -- -- 70 40 160 130 25 25 -- -- 70 40 160 130 mA ISB2 CE"A" = VIL and CE"B" =...
Description HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 高K的8双端口静态RAM的信号量
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 4K X 8 DUAL-PORT SRAM, 45 ns, PQFP64
350V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail

File Size 144.80K  /  13 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...0V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1104 5000 4...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...0 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Char...280 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 140 0 25 50 75 100 125 150 175 ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...rature, for 10 seconds Max. 180 130 700 230 1.5 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W...280 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 140 0 25 50 75 100 125 150 175 ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ... 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1405S/L 10000...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1405 100000 2...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...0 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF2807S/IRF2807L...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF2807 7000 600...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...citance Min. 75 --- --- 2.0 180 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.084 10.5 --- -...280 420 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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