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  10.1mhz Datasheet PDF File

For 10.1mhz Found Datasheets File :: 71129    Search Time::2.203ms    
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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ... V V A A mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Em...1MHz min typ max -100 -1 Unit nA A V V V -25 -20 -7 90 25 - 0.4 -1.2 150 15 *2 22...
Description Silicon PNP epitaxial planer type

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2519 No.6305-1/5 2SA2011/2SC5564 C...1MHz Output Capacitance, Cob - pF 100 7 5 3 2 Cob -- VCB 2SC5564 f=1MHz Output Capacitanc...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012/2SC5565 C...1MHz Output Capacitance, Cob - pF 5 3 2 100 7 5 3 2 10 7 5 3 2 5 7 0.1 Cob -- VCB 2SC5565 f=...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501TS KT TA-3260 No.6307-1/5 2SA2013/2SC5566 Conti...1MHz 5 3 Cob -- VCB 2SC5566 f=1MHz Output Capacitance, Cob - pF 2 100 7 5 3 2 10 7 5 3 ...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ...ings (-50)80 (-)50 (-)6 (-)7 (-)10 (-)1.2 1.3 3.5 150 -55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta = 25C Pa...1MHz 200 (290) 330 (50)28 Conditions Ratings min typ max (-)0.1 (-)0.1 560 MHz MHz pF Unit A A Ma...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.94K  /  5 Page

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ...a=25C Ta= -40C 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 Ta=125C Ta=25C Ta= -40C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) ...1MHz Ta=25C EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector...
Description Low frequency transistor

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...it:mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to...1MHz 150 (290) 330 (50)28 Conditions Ratings min typ max (-)0.1 (-)0.1 300 MHz MHz pF Unit A A Co...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2025

SANYO[Sanyo Semicon Device]
Part No. 2SA2025
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21000TS (KOTO) TA-2707 No.6404-1/4 2SA2025 Continued...1MHz Base-to-Emitter Saturation Voltage, VBE (sat) - V Output Capacitance, Cob - pF 5 3 2 ...
Description PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text ...20 IB=-100uA 600 400 -10 IB=-50uA 200 0 0 40 80 120 ZuI*"x*@Ta(*Z) 160 -0 -0 -2 -4 -6 -8 -10 ROEN^*EG~b^SO"d*@V CE(V) ...1MHz --"3/4`Nae***I*@f T(MHz) 10 10 1 1 10 G~b^"d--*@I E(mA) 100 1 -0.1 -1 -10 ...
Description SILICON EPITAXIAL TRANSISTOR

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    2SA2031 2SC5669

SANYO[Sanyo Semicon Device]
Formosa MS
Sanyo Electric Co.,Ltd.
Part No. 2SA2031 2SC5669
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61500 TS IM TA-2927 No.6586-1/4 2SA2031 / 2SC5669 Co...1MHz VCE=(--)5V, IC=(-)7.5A IC=(--)7.5A, IB=(--)0.75A IC=(--)5mA, IE=0 IC=(--)50mA, RBE= IE=(-)5mA, ...
Description NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications
230V / 15A/ AF100W Output Applications

File Size 33.17K  /  4 Page

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For 10.1mhz Found Datasheets File :: 71129    Search Time::2.203ms    
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