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Mitsubishi Electric Corporation
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Part No. |
FS20KMA-5A
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OCR Text |
...1 1 4.0 0.20 2.00 2.0 3.13 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drai...5a high-speed switching use sep. 2001 on-state voltage vs. gate-source voltage (typical) gate-source... |
Description |
Power MOSFETs: FS Series, Medium Voltage, 250V
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File Size |
62.03K /
4 Page |
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it Online |
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Elpida Memory, Inc.
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Part No. |
EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E
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OCR Text |
............. .....................13 simplified state diagram .................................................................................5a -4a frequency (mbps) 533 400 parameter symbol min. max. min. max. unit notes dq out... |
Description |
512M bits DDR-II SDRAM 512M比特的DDR - II内存 512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
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File Size |
375.15K /
56 Page |
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it Online |
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Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
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Part No. |
FS20KMA-5A
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OCR Text |
...00 -- -- -- -- -- -- -- -- -- 3.13
Unit V A mA V V S pF pF pF ns ns ns ns V C/W
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage For... |
Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
23.13K /
2 Page |
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it Online |
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ELPIDA MEMORY INC
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Part No. |
E5116ABSA-5A-E
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OCR Text |
............ ..................... 13 simplified state diagram..................................................................................5a -4a frequency (mbps) 533 400 parameter symbol min. max. min. max. unit note... |
Description |
32M X 16 DDR DRAM, 0.5 ns, PBGA84
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File Size |
399.71K /
56 Page |
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it Online |
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