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  0.29a Datasheet PDF File

For 0.29a Found Datasheets File :: 392    Search Time::1.828ms    
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    ADPOW[Advanced Power Technology]
Part No. APT50M80LVFR APT50M80B2VFR APT50M80B2VFR_03 APT50M80B2VFR03
OCR Text 0.080 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFE...29A) Ohms A nA Volts 12-2003 050-5912 Rev B Zero Gate Voltage Drain Current (VDS = 500V, VGS ...
Description POWER MOS V

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    ADPOW[Advanced Power Technology]
Part No. APT50M65JLL_03 APT50M65JLL APT50M65JLL03
OCR Text 0.065 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement ...29A) Ohms A nA Volts 12-2003 050-7019 Rev D Zero Gate Voltage Drain Current (VDS = 500V, VGS ...
Description POWER MOS 7 R MOSFET

File Size 99.40K  /  5 Page

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    Fairchild Semiconductor, Corp.
Part No. TIP29CTSTU
OCR Text ...ulse) 3 a i b base current 0.4 a p c collector dissipation (t c =25 c) 30 w collector dissipation (t a =25 c) 2 w t j junct...29a : tip29b/29c v ce = 30v, i b = 0 v ce = 60v, i b = 0 0.3 0.3 ma ma i ces collector cut-o...
Description NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 1 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB

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    IRL3202

International Rectifier
Part No. IRL3202
OCR Text ...ion 69 w linear derating factor 0.56 w/c v gs gate-to-source voltage 10 v v gsm gate-to-source voltage 14 v (start up transient, tp = 1...29a ? CCC CCC 0.016 w v gs = 7.0v, i d = 29a ? v gs(th) gate threshold voltage 0.70 CCC CCC v v ...
Description 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 94.93K  /  7 Page

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    IRFZ44EL IRFZ44ES

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44EL IRFZ44ES
OCR Text ...e Rated VDSS = 60V RDS(on) = 0.023 G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advan...29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条)
(IRFZ44ES / IRFZ44L) Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 159.31K  /  10 Page

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    IRFZ44E IRFZ44EPBF

IRF[International Rectifier]
Part No. IRFZ44E IRFZ44EPBF
OCR Text ...ed D VDSS = 60V RDS(on) = 0.023 G S ID = 48A Description Fifth Generation HEXFETs from International Rectifier utilize advan...29A 4.0 V VDS = VGS, ID = 250A --- S VDS = 30V, ID = 29A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

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    HUFA76419P3 HUFA76419S3S HUFA76419S3ST

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76419P3 HUFA76419S3S HUFA76419S3ST
OCR Text 0.040 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC...29A, VGS = 10V (Figures 9, 10) ID = 19A, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL...
Description 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs

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    IRL3202STRL IRL3202STRR

International Rectifier
Part No. IRL3202STRL IRL3202STRR
OCR Text ...ion 69 w linear derating factor 0.56 w/c v gs gate-to-source voltage 10 v v gsm gate-to-source voltage 14 v (start up transient, tp = 1...29a, di/dt 63a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 0.64m...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 132.12K  /  8 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50M65JFLL_03 APT50M65JFLL APT50M65JFLL03
OCR Text 0.065 S POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power ...29A) Ohms A nA Volts 12-2003 050-7032 Rev D Zero Gate Voltage Drain Current (VDS = 500V, VGS ...
Description POWER MOS 7 R FREDFET

File Size 99.79K  /  5 Page

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    FUJI[Fuji Electric]
Part No. 2SK3771-01MR
OCR Text ... ambient VDS=25V Min. 100 3.0 Typ. Max. 5.0 25 250 100 59 1100 300 22 19 9 30 12 35 15 11 1.50 Units V V A A nA m S pF 6 ...29A,Tch=25 C 12 Vcc=50V 10 max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 ...
Description N-CHANNEL SILICON POWER MOSFET

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