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Vishay Intertechnology, Inc.
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| Part No. |
HFA08PB120S
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| OCR Text |
...ute maximum ratings -55 to +150 w a c 5/12/97 v r = 1200v v f (typ.)* = 2.4v i f(av) = 8.0a q rr (typ.)= 140nc i rrm (typ.) = 4.5a t rr (typ.) = 28ns di (rec)m /dt (typ.)* = 85a/s * 125c to-247ac (modified)
hfa08pb120 ... |
| Description |
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| File Size |
224.73K /
6 Page |
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ROHM[Rohm]
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| Part No. |
BR93LC56 BR93LC56F BR93LC56RF BR93LC56FV
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| OCR Text |
...Data 16bit register amplifier R/w 16bit EEPROM array
DO
Dummy bit
*Absolute maximum ratings (Ta = 25C)
Parameter Applied voltage B...reduced by 5.0mw for each increase in Ta of 1C over 25C. 2 reduced by 3.5mw for each increase in Ta ... |
| Description |
2,048-Bit Serial Electrically Erasable PROM
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| File Size |
125.09K /
12 Page |
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it Online |
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Dynex
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| Part No. |
AN5177
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| OCR Text |
w
Using an improved gate drive to ease GTO series connection problems.
w
a D . w
aS t
ee h
4U t
.c
om
AN5177 Appl...reduced so can Cs.
TURN-OFF BY CURRENT REVERSAL
This is the reverse recovery mode, as with a dio... |
| Description |
Improved Gate Driver
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| File Size |
125.88K /
5 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SPP47N10L
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| OCR Text |
...h a resistance of less than 6 m w for switching cur- rents up to 80 a. thanks to the continuous develop- ment of the s-fet technology, tran-...reduced power dissi- pation and hence the option of implementing more compact designs. in addition, ... |
| Description |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POwER, MOSFET
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| File Size |
235.58K /
2 Page |
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it Online |
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Price and Availability
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