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v 2a Datasheet PDF File

For v 2a Found Datasheets File :: 36793 Search Time::1.75ms
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				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text	... 15 2.0 150 -55 to +150 Unit v 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward current transfer ratio hFE which...2a, f = 10MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, vCC = -50v 30 0.3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 ...
Description	Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 v, PNP, Si, POWER TRANSISTOR
File Size	53.34K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2137 2SD2137A
OCR Text	...6 5 3 15 2 150 -55 to +150 Unit v 18.00.5 Solder Dip 0.350.1 5.00.1 10.00.2 1.0 s Absolute Maximum Ratings Parameter Collector to b...2a, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, vCC = 50v 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 v v MH...
Description	Silicon NPN triple diffusion planar type(For power amplification)
File Size	52.93K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text	... -2 15 2.0 150 -55 to +150 Unit v 90 2.50.2 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter C...2a vCE = -4v, IC = -2a IC = -2a, IB = -8mA vCE = -10v, IC = - 0.5A, f = 1MHz IC = -2a, IB1 = -8mA, I...
Description	Silicon PNP epitaxial planar type Darlington(For power amplification)
File Size	59.81K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2138 2SD2138A
OCR Text	...5 4 2 15 2 150 -55 to +150 Unit v 2SD2138 2SD2138A 2SD2138 C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 Collector to bas...2a vCE = 4v, IC = 2a IC = 2a, IB = 8mA vCE = 10v, IC = 0.5A, f = 1MHz IC = 2a, IB1 = 8mA, IB2 = -8mA...
Description	Silicon NPN triple diffusion planar type Darlington(For power amplification)
File Size	59.65K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD2139
OCR Text	...6 3 1 15 2 150 -55 to +150 Unit v v v A A A W C C 90 1.20.1 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector t...2a, IB = 0.05A vCE = 12v, IC = 0.2a, f = 10MHz min typ max 100 100 100 Unit A A A v 6...
Description	Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)
File Size	49.15K / 3 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ459
OCR Text	...6 1.65 70 150 --55 to +150 Unit v v A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown voltage Zero-Ga...2a ID=--2a, vGS=--10v vDS=--20v, f=1MHz vDS=--20v, f=1MHz vDS=--20v, f=1MHz See specified Test Circu...
Description	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	32.07K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	...tance R DS(on) = 0.18 typ. (at v GS = -10v, ID = -1A) * Low drive current * High speed switching * 4v gate drive devices. Outline UPA...2a, vGS = 0 I F = -2a, vGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, vGS = 0 I G = 100A, vDS ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ485 2SJ485TP-FA
OCR Text	...16 1 20 150 -55 to +150 Unit v v A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown voltage Zero...2a ID=-2a, vGS=-10v ID=-2a, vGS=-4v vDS=-20v, f=1MHz vDS=-20v, f=1MHz vDS=-20v, f=1MHz See specified...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60v v(BR)DSS \| 4A I(D) \| TO-252vAR P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	42.21K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ499
OCR Text	...32 1.0 30 150 --55 to +150 Unit v v A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown voltage Zero-Ga...2a, vGS=--4v vDS=--10v, f=1MHz vDS=--10v, f=1MHz vDS=--10v, f=1MHz See specified Test Circuit See sp...
Description	Load Switching Applications
File Size	31.35K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	2SJ502
OCR Text	....0 0.25 150 -55 to +150 Unit v v A A W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown voltage Zero-Ga...2a ID=-0.5A DC op Switching Time, SW Time - ns 5 3 2 Drain Current, ID - A <100s 1m s 1...
Description	Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	169.75K / 4 Page	View it Online	Download Datasheet

For v 2a Found Datasheets File :: 36793 Search Time::1.75ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |