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IRC Advanced Film
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| Part No. |
CHP1/8506R04F13LF CHP1/21006R04F13LF CHP1/8505110F13LF CHP1/8505111F13LF
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| Description |
resistOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 50 ppm, 6.04 ohm, SURFACE MOUNT melf, ROHS COMPLIANT
resistOR, METAL GLAZE/THICK FILM, 0.5 W, 1 %, 100 ppm, 6.04 ohm, SURFACE MOUNT melf, ROHS COMPLIANT
resistOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 50 ppm, 511 ohm, SURFACE MOUNT melf, ROHS COMPLIANT
resistOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 50 ppm, 5110 ohm, SURFACE MOUNT melf, ROHS COMPLIANT
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| File Size |
827.60K /
3 Page |
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it Online |
Download Datasheet
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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