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TYN40 854927 SP6203 01504 DF005 BPC250 0NF03L N74F862D
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    Renesas
Part No. HD74LVC04
OCR Text ... technology corp ., all rights reser v ed. printed in ja pan. colophon .1.0
Description Standard IC>General-Purpose Logics>HD/RD74LVC Series

File Size 78.63K  /  6 Page

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    Renesas
Part No. HD74LVC08
OCR Text ... technology corp ., all rights reser v ed. printed in ja pan. colophon .1.0
Description Standard IC>General-Purpose Logics>HD/RD74LVC Series

File Size 78.58K  /  6 Page

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    HY10N65FT HY10N65T

HY ELECTRONIC CORP.
Part No. HY10N65FT HY10N65T
OCR Text ...mal chara cteristics comp any reser ves the right t o improve product design,functions and reliability without notice note : 1. m axi mum dc current li mited by the pa ck age drain gate source 1 2 3 1 g 2 d 3 s 1 g 2 d 3 s to-220ab...
Description 650V / 10A N-Channel Enhancement Mode MOSFET

File Size 132.22K  /  4 Page

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    HY12N65FT HY12N65T

HY ELECTRONIC CORP.
Part No. HY12N65FT HY12N65T
OCR Text ...mal chara cteristics comp any reser ves the right t o improve product design,functions and reliability without notice note : 1. m axi mum dc current li mited by the pa ck age drain gate source 1 2 3 1 g 2 d 3 s 1 g 2 d 3 s to-220ab...
Description 650V/ 12A N-Channel Enhancement Mode MOSFET

File Size 131.68K  /  4 Page

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    HY8LFR060T

HY ELECTRONIC CORP.
Part No. HY8LFR060T
OCR Text ...v@i f =8a, t rr =32ns comp any reser ves the right t o improve product design,functions and reliability without notice thermal & me cha nical spe cif ication s to-220ac dimensions in inches (millimeters) hy8lfr060t pa ra m e te r s ...
Description FAST RECOVERY EPITAXIAL DIODE

File Size 165.59K  /  2 Page

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    HY30FR060P

HY ELECTRONIC CORP.
Part No. HY30FR060P
OCR Text ...@i f =15a, t rr =28ns comp any reser ves the right t o improve product design,functions and reliability without notice thermal & me cha nical spe cif ication s to - 247ab dimensions in millimeters (inches) hy30fr060p pa ra me te r s...
Description FAST RECOVERY EPITAXIAL DIODE

File Size 228.80K  /  2 Page

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    HY4N60D

HY ELECTRONIC CORP.
Part No. HY4N60D
OCR Text ...mal chara cteristics comp any reser ves the right t o improve product design,functions and reliability without notice note : 1. m axi mum dc current li mited by the pa ck age drain gate source 1 2 3 to-252 to-251 1 2 3 g d s 1 2 d ...
Description 600V / 4.0A N-Channel Enhancement Mode MOSFET

File Size 164.00K  /  4 Page

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    HY4N60T

HY ELECTRONIC CORP.
Part No. HY4N60T
OCR Text ...mal chara cteristics comp any reser ves the right t o improve product design,functions and reliability without notice note : 1. m axi mum dc current li mited by the pa ck age drain gate source 1 2 3 1 g 2 d 3 s 1 g 2 d 3 s to-220ab...
Description 600V / 4.0A N-Channel Enhancement Mode MOSFET

File Size 104.34K  /  4 Page

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    HY60FR060EP

HY ELECTRONIC CORP.
Part No. HY60FR060EP
OCR Text ...@i f =60a, t rr =35ns comp any reser ves the right t o improve product design,functions and reliability without notice thermal & me cha nical spe cif ication s to - 247ac modified dimensions in millimeters (inches) hy60fr060ep pa ra...
Description FAST RECOVERY EPITAXIAL DIODE

File Size 178.25K  /  2 Page

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