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  n-cdma w-cdma Datasheet PDF File

For n-cdma w-cdma Found Datasheets File :: 1725    Search Time::1.625ms    
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    HHM1506 HHM1533 HHM1534

TDK Electronics
Part No. HHM1506 HHM1533 HHM1534
OCR Text ...ed port 4 balanced port 5 gnd 6 n.c. terminal functions 123 5 64 unbalanced input 50 ? balanced output 100 ? 0.35 0.30 dimensions in mm 0.80...cdma/tx & rx hhm series hhm1533 shapes and dimensions circuit diagram recommended pc board patterns...
Description Multilayer Balun Transformers For w-cdma Tx & Rx
HHM Series

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    BLF6G22-180RN BLF6G22LS-180RN

NXP Semiconductors N.V.
Part No. BLF6G22-180RN BLF6G22LS-180RN
OCR Text ... of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 = -38 dBc N ACPR = -42 dBc I...CDMA and CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency ran...
Description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;

File Size 90.26K  /  11 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX1959 MAX1958 MAX1958ETP MAX1959ETP
OCR Text n-cdma Cellular Phone HBT PA Management ICs General Description Features o Step-Down Converter Dynamically Adjustable Output Voltage from 0.75V to 3.4V (MAX1958) Dynamically Adjustable Output Voltage from 1V to 3.6V (MAX1959) 800mA Guaran...
Description w-cdma/n-cdma Cellular Phone HBT PA Management ICs

File Size 792.48K  /  24 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX8504 MAX8500 MAX8500ETC MAX8503ETC MAX8502ETC MAX8501ETC MAX8504ETC MAX8503
OCR Text n-cdma/w-cdma Handsets General Description Features o Integrated Bypass PFET o 150mV Dropout at 600mA Load (Regardless of External Inductor) o Dynamically Adjustable Output from 0.4V to VBATT o Externally Fixed Output from 1.25V to 2.5V w...
Description PWM Buck Converters with Bypass FET for n-cdma/w-cdma Handsets

File Size 294.97K  /  14 Page

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    Motorola
Part No. MRF5P21240
OCR Text ...its per 56 mm, 13 inch Reel. N-Channel Enhancement-Mode Lateral MOSFET MRF5P21240R6 2170 MHz, 52 W AVG., 2 x w-cdma, 28 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-04, STYLE 1 NI-1230 MAXIMUM RATINGS Rating Drain-Source Volt...
Description 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET

File Size 585.82K  /  8 Page

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    MRF6S27085HSR3 MRF6S27085HR3

Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
Part No. MRF6S27085HSR3 MRF6S27085HR3
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f ...
Description N-Channel Enhancement-Mode Lateral MOSFETs

File Size 353.35K  /  12 Page

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    B39781B7928P810

EPCOS
Part No. B39781B7928P810
OCR Text ...duplexer data sheet application n low-loss saw duplexer for mobile telephone w-cdma band 13 system n low insertion attenuation n low amplitude ripple n single ended to balanced transformation in antenna - rx path n impedance transformation ...
Description SAW Duplexer

File Size 203.50K  /  13 Page

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    BLF4G22-130 BLF4G22LS-130

NXP Semiconductors
Part No. BLF4G22-130 BLF4G22LS-130
OCR Text ... of 28 V and an IDq of 1150 mA: N Average output power = 33 W N Power gain = 13.8 dB N Efficiency = 26 % N ACPR = -41 dBc N IMD3 = -37 dBc I...CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range. 2....
Description UHF power LDMOS transistor

File Size 76.75K  /  13 Page

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    Motorola
Part No. MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S19090L
OCR Text N-Channel Enhancement-Mode Lateral MOSFETs MRF5S19090LR3 MRF5S19090LSR3 Designed for PCN and PCS base station applications with frequencies ...CDMA and multic arrier amplifier applications. * Typical 2-Carrier n-cdma Performance for VDD = 28 V...
Description 1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET

File Size 437.91K  /  12 Page

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    MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
OCR Text N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f...
Description RF Power Field Effect Transistors

File Size 512.68K  /  12 Page

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For n-cdma w-cdma Found Datasheets File :: 1725    Search Time::1.625ms    
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