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For n hex Found Datasheets File :: 5138 Search Time::1.078ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	n-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resist...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage n-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	n-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resist...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage n-Channel enhancement mode power MOSFETs. ECOnOLInE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压n新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...kage Weight 29.2 10 lbin nm Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 052...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	...tion of low loss, high voltage, n-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS ...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, n-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M38JLL
OCR Text	n-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RD...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, n-Channel enhancement mode power MOSFETS.
File Size	51.38K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	...tion of low loss, high voltage, n-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS ...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, n-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50M50JLC APT5010JLC
OCR Text	n-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. L...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS VI 500V 77A 0.050 Ohm Power MOS VITM is a new generation of low gate charge, high voltage n-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage n-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	n-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resist...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage n-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	n-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resist...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS V is a new generation of high voltage n-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压n新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60Jn
OCR Text	... APT 50M60Jn UnIT Volts Amps n - CHAnnEL EnHAnCEMEnT MODE HIGH VOLTAGE POWER MOSFETS 500 71 284 30 690 5.52 -55 to 150 300 and Indu...hex nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS IV 500V 71A 0.060 Ohm n-CHAnnEL EnHAnCEMEnT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

For n hex Found Datasheets File :: 5138 Search Time::1.078ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |