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				TOSHIBA
Part No.	TPCC8138
OCR Text	... a v gs = -4.5 v, i d = -18 a min -20 -12 -0.5 typ. 13 12 8.1 6.0 max 0.1 -10 -1.2 42 21 11 7.5 unit a v m ? note 5: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the dr...
Description	Power MOSFET (P-ch single)
File Size	233.20K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8137
OCR Text	... a v gs = -4.5 v, i d = -13 a min -20 -12 -0.5 typ. 20 17 12 8.0 max 0.1 -10 -1.2 52 30 16 10 unit a v m ? note 5: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drai...
Description	Power MOSFET (P-ch single)
File Size	231.43K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8136
OCR Text	...a v gs = -4.5 v, i d = -9.4 a min -20 -12 -0.5 typ. 26 22 17 13 max 0.1 -10 -1.2 60 37 22 16 unit a v m ? note 5: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain...
Description	Power MOSFET (P-ch single)
File Size	232.53K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8131
OCR Text	...-5 a v gs = -10 v, i d = -5 a min -30 -21 -0.8 typ. 17.6 13.5 max 0.1 -10 -2.0 23 17.6 unit a v m ? note 5: if a forward bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain- source...
Description	Power MOSFET (P-ch single)
File Size	236.32K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SB647 2SB647A
OCR Text	...C current transfer ratio Symbol min V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max min -- -- -- -10 320 -- -1 Typ Max Unit...
Description	Silicon PNP Transistor Silicon PNP Epitaxial
File Size	32.10K / 6 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SMK830P SMK830P-1
OCR Text	... high voltage : bv dss =500v(min.) ? low c rss : c rss =33pf(typ.) ? low gate charge : qg=16nc(typ.) ? low r ds(on) : r ds(on) =1.5 (max.) ordering information marking diagram absolute maximum rati...
Description	SWITCHING REGULATOR APPLICATIONS
File Size	395.03K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMF87EN
OCR Text	...ata symbol parameter conditions min typ max unit v ds drain-source voltage - - 30 v v gs gate-source voltage t j = 25 c -20 - 20 v i d drain current v gs = 10 v; t amb = 25 c; t 5 s [1] - - 1.9 a static characteristics r dson drain-sour...
Description	30 V, single N-channel Trench MOSFET
File Size	197.55K / 14 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SB715 2SB716 2SB716A
OCR Text	...Collector cutoff current Symbol min Typ Max -- -- -0.5 -- 800 -- 2SB716 min Typ Max -- -- -- -0.5 800 -- 2SB716A min Typ Max -- -- -- -0.5 500 -- -0.75 V -0.2 -- -- V Unit Test conditions V V A A IC = -10 A, IE = 0 IC = -1 mA, RBE = VCB = ...
Description	Silicon PNP Epitaxial 硅外延进步党 Silicon PNP Transistor
File Size	31.71K / 6 Page	View it Online	Download Datasheet

For min Found Datasheets File :: 433717 Search Time::2.875ms
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