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  ion-implanted Datasheet PDF File

For ion-implanted Found Datasheets File :: 975    Search Time::1.437ms    
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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RURU50120 FN3741
OCR Text ...s of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its...
Description 50A/ 1200V Ultrafast Diode
50A, 1200V Ultrafast Diode 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200V Ultrafast Diode
From old datasheet system

File Size 49.76K  /  4 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. DM74AS74 DM74AS74SJX DM74AS74M DM74AS74N DM74AS74SJ DM74AS74MX
OCR Text ...ange s Advanced oxide-isolated, ion-implanted Schottky TTL process s Functionally and pin-for-pin compatible with Schottky and LS TTL counterpart s Improved AC performance over S74 at approximately half the power Ordering Code: Order Nu...
Description Dual D-Type Positive-Edge-Triggered Flip-Flop with Preset and Clear AS SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP14
Dual D Positive-Edge-Triggered Flip-Flop with Preset and Clear

File Size 65.28K  /  7 Page

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    MHW6185-6A

Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MHW6185-6A
OCR Text ...All Gold Metallization 7 GHz fT ion-implanted Transistors MHW6185-6A 18.5 dB GAIN 600 MHz 87-CHANNEL CATV AMPLIFIER ABSOLUTE MAXIMUM RATINGS Rating RF Voltage Input DC Supply Voltage Operating Case Temperature Range Storage Temper...
Description High Ouput Doubler 600 MHz CATV Amplifier Modules

File Size 74.71K  /  2 Page

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    AT-64020

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-64020
OCR Text ...on of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 200 mil BeO Package 4-179 5965-8915E AT-64020 Absolute Maximum Ratings Symbol VEBO VCBO ...
Description Up to 4 GHz Linear Power Silicon Bipolar Transistor

File Size 40.15K  /  4 Page

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    DM74ALS86 DM74ALS86M DM74ALS86N DM74ALS86MX

FAIRCHILD[Fairchild Semiconductor]
Part No. DM74ALS86 DM74ALS86M DM74ALS86N DM74ALS86MX
OCR Text ...ange s Advanced oxide-isolated, ion-implanted Schottky TTL process s Functionally and pin for pin compatible with Schottky and low power Schottky TTL counterpart s Improved AC performance over Schottky and low power Schottky counterparts ...
Description Quad 2-Input Exclusive-OR Gate

File Size 46.84K  /  4 Page

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    DM74ALS874B DM74ALS874BNT DM74ALS874BWM

FAIRCHILD[Fairchild Semiconductor]
Part No. DM74ALS874B DM74ALS874BNT DM74ALS874BWM
OCR Text ...ange s Advanced oxide-isolated, ion-implanted Schottky TTL process s 3-STATE buffer-type outputs drive bus lines directly s Space saving 300 mil wide package s Asynchronous clear Ordering Code: Order Number DM74ALS874BWM DM74ALS874BNT P...
Description Dual 4-Bit D-Type Edge-Triggered Flip-Flop with 3-STATE Outputs

File Size 56.26K  /  6 Page

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    RHRG30120CC FN3411

INTERSIL[Intersil Corporation]
Part No. RHRG30120CC FN3411
OCR Text ...s of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching ap...
Description 30A/ 1200V Hyperfast Dual Diode
30A, 1200V Hyperfast Dual Diode
From old datasheet system

File Size 31.81K  /  3 Page

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