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				Siliconix Vishay
Part No.	J174 J177 J176 SST177 70257
OCR Text	... Unit V(BR)GSS VGS(off) IDSS igss IG ID( ff) D(off) rDS(on) VGS(F) IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -10 nA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = -15 V, ID = -1 mA VDS = -15 V, VGS = 10 V TA = 125_C VGS =...
Description	TRANSISTOR JUNCTION FET From old datasheet system P-Channel JFETs
File Size	70.60K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	JANSR2N7294 FN4292
OCR Text	...e Voltage Drain Current IDSS igss VDS(ON) rDS(ON) td(ON) tr td(OFF) tf Qg(TOT) Qg(10) Qg(TH) Qgs Qgd RJC RJA VDS = 160V, VGS = 0V VGS = 20V VGS = 10V, ID = 23A ID = 15A, VGS = 10V Gate to Source Leakage Current Drain to Source O...
Description	23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET 23A, 200V, 0.115 Ohm, Rad Hard,N-Channel Power MOSFET From old datasheet system 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	47.67K / 7 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. Calogic, LLC
Part No.	SST4117 PN4117A 2N4117A 2N4118A PN4119A PN4118A 2N4119A SST4119 SST4118 70239
OCR Text	...te R G t Reverse Current C t igss VGS = -10 V VDS = 0 V VGS = -10 V VDS = 0 V TA = 100_C pA nA Gate Operating Currentc Drain Cutoff Currentc Gate-Source Forward Voltagec IG ID(off) VGS(F) VDG = 15 V, ID = 30 mA VDS = 10...
Description	N-Channel JFET(最小栅源击穿电40V，最小饱和漏极电00μA的N沟道结型场效应管) N沟道场效应（最小栅源击穿电 40V的，最小饱和漏极电流为200μA的N沟道结型场效应管 N-Channel JFET(最小栅源击穿电40V，最小饱和漏极电0μA的N沟道结型场效应管) N沟道场效应（最小栅源击穿电 40V的，最小饱和漏极电0μA的N沟道结型场效应管 From old datasheet system N-Channel JFETs
File Size	60.96K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNM57110
OCR Text	... = 6.9A, VGS = 12V, RG = 7.5 igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
File Size	219.00K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM9064 2098
OCR Text	... = -35, VGS =-12V, RG = 2.35 igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time ...
Description	RADIATION HARDENED POWER MOSFET From old datasheet system
File Size	120.21K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA597260 2129 IRHNA593260 IRHNA597260PBF
OCR Text	...BR)DSS RDS(on) VGS(th) gfs IDSS igss Qg Qgs Qgd td(on) tr td(off) tf LS + LD Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage ...
Description	-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package From old datasheet system RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
File Size	116.96K / 8 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-025
OCR Text	...eakage Current Typ <10 Units !A igss Gate Leakage VGS=5V,VDS=0V <1 IDSS VGS=0V,VDS=48V A operation. CHARACTERISTICS Conditions ITHERMAL Drain Leakage Current Gate Current VGS=5V,VDS=0V <1 !A GSS Symbol Drain-Source Breakdown Parameter Condi...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
File Size	642.96K / 2 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRHSNA53064 IRHSNA58064 IRHSNA54064 IRHSNA57064
OCR Text	...D = 45A, VGS =12V, RG = 2.35 igss igss Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Ri...
Description	From old datasheet system RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) 60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
File Size	111.44K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHG9110 2072
OCR Text	...ate Voltage Drain Current -- -- igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Ris...
Description	RADIATION HARDENED POWER MOSFET From old datasheet system
File Size	118.69K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM3450 IRHM4450 IRHM8450 IRHM7450
OCR Text	... = 11A, VGS = 12V, RG = 2.35 igss igss Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time ...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Simple Drive Requirements
File Size	297.94K / 12 Page	View it Online	Download Datasheet

For igss Found Datasheets File :: 23993 Search Time::2.141ms
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