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  igs Datasheet PDF File

For igs Found Datasheets File :: 1478    Search Time::1.125ms    
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    FPD1500SOT89

Filtronic Compound Semiconductors
Part No. FPD1500SOT89
OCR Text ... -5 V VDS = 1.3 V; IDS = 1.5 mA igs = 1.5 mA IGD = 1.5 mA 0.7 12 12 375 42 465 750 400 1 1.0 16 16 15 1.3 550 mA mA mS A V V V 38 1.2 40 dBm 1.5 dB Symbol P1dB SSG PAE Test Conditions VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS VD...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

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    Maxim Integrated Products, Inc.
Part No. MAX5621 MAX5623 MAX5622
OCR Text ... MHz ns ns ns ns ns VIH VIL VGS igs -0.5V VGS +0.5V (Note 6) -0.5 -60 0.998 2.0 0.8 1 1 +0.5 0 1.002 V A V/V V V A VREF 7 2.5 k V VOUT_ = 0V (Note 5), TA = +25C (Note 4) 0.5 0.5 0.25 1 250 1 40 0.08 % nV-s nV-s mV mV/s VRMS SYMBOL CONDITI...
Description 16-Bit DACs with 16-Channel Sample-and-Hold Outputs

File Size 662.17K  /  16 Page

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    NE6500496

NEC
Part No. NE6500496
OCR Text ...iciency Linear Gain SYMBOL Pout igs MIN. 35.5 -5 - 11.0 TYP. 36.0 - 45 11.5 MAX. - 5 - - UNIT dBm mA % dB Pin 20 dBm (*) TEST CONDITIONS f = 2.3 GHz, Vds = 10 V Ids 0.4 A, Pin = 26.0 dBm Rg = 200 add GL * The other are the same as...
Description 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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    SGF25

SANYO[Sanyo Semicon Device]
Part No. SGF25
OCR Text ...) |Yfs| NFmin Ga MAG Conditions igs=-10A VDS=3V, VGS=0 VDS=3V, ID=100A VDS=3V, ID=10mA VDS=3V, ID=10mA f=12GHz Ratings min -5.0 30 -0.5 typ 45 -1.5 40 2.5 5.5 7.0 max 65 -3.0 Unit V mA V mS dB dB dB SANYO Electric Co.,Ltd. Semiconductor ...
Description For C- to X-band local oscillator and amplifier

File Size 63.38K  /  3 Page

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    STP6NK50Z STD6NK50ZT4 STF6NK50Z STD6NK50Z

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP6NK50Z STD6NK50ZT4 STF6NK50Z STD6NK50Z
OCR Text ...eakdown Voltage Test Conditions igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD...
Description N-CHANNEL 500V - 0.93ohm - 5.6A TO-220/TO-220FP/DPAK
N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH™ MOSFET
N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text ...S= 3V IDS= 30mA VDS= 3V VGS= 0V igs= -30A Channel to Case MIN. TYP. MAX. UNIT 600 mS -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V C/W The information contained herein is presented only as a guide for the applications of our products....
Description MICROWAVE POWER GaAs FET
From old datasheet system

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    FLM7179-18F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM7179-18F
OCR Text ... = 4875mA VDS = 5V, IDS = 250mA igs = -250A Min. -0.5 -5.0 42.0 7.0 -44 Limit Typ. Max. 7.5 7.5 -1.5 42.5 8.0 11.25 -3.0 Unit A S V V dBm dB mA % dB dBc C/W C 4875 6000 30 -46 1.6 0.6 1.8 80 G.C.P.: Gain Compression Point, S.C.L.: Sin...
Description C-Band Internally Matched FET C波段内部匹配场效应管
From old datasheet system

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    FLM7179-4F

Electronic Theatre Controls, Inc.
ETC
Part No. FLM7179-4F
OCR Text ...S = 1100mA VDS = 5V, IDS = 85mA igs = -85A Min. -0.5 -5.0 35.5 8.0 -44 Limit Typ. Max. 1700 2600 1700 -1.5 36.5 9.0 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C 1100 1300 35 -46 5.0 0.6 6.0 80 G.C.P.: Gain Compression Point, S.C.L.: S...
Description C-Band Internally Matched FET

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    FLM7179-8F

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. FLM7179-8F
OCR Text ... = 2200mA VDS = 5V, IDS = 170mA igs = -170A Min. -0.5 -5.0 38.5 8.0 -44 Limit Typ. Max. 3400 5200 3400 -1.5 39.5 9.0 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C 2200 2600 35 -46 3.0 0.6 3.5 80 G.C.P.: Gain Compression Point, S.C.L.: ...
Description C-Band Internally Matched FET

File Size 251.02K  /  4 Page

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    ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 ATF-501P8

Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
Part No. ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 ATF-501P8
OCR Text ...ings[1] Symbol VDS VGS VGD IDS igs Pdiss Pin max. TCH TSTG ch_b Parameter Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature ...
Description ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

File Size 180.51K  /  22 Page

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For igs Found Datasheets File :: 1478    Search Time::1.125ms    
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