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181KZF STK043 FJV3102R X9015 BCR142T LDS6028 T35C704 2A102
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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SD667 2SD667A
OCR Text ... Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD667A Max -- -- -- 10 320 -- 1 1.5 -- -- Min 120 100 5 -- 60 30 -- -- -- -- Typ -- -- -- -- --...f = 1 MHz Typ -- -- -- -- -- -- -- -- 140 12 120 80 5 -- 60 30 -- -- -- -- DC current trans...
Description Silicon NPN Epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2SD669 2SD669A SD669
OCR Text ...pation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 2SD669 ...f = 1 MHz Min 180 120 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 DC current ...
Description Silicon NPN Epitaxial

File Size 35.10K  /  7 Page

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    2SD716

Wing Shing Computer Components
Part No. 2SD716
OCR Text ...REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage p...f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB...
Description SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

File Size 88.15K  /  1 Page

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    2SD717

Wing Shing Computer Components
Part No. 2SD717
OCR Text ...REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V TYP MAX 70 70 10 80 2 2.0 1.0UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat V...f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

File Size 87.31K  /  1 Page

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    2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D

Microsemi, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SD755 2SD756 2SD756A 2SD756E 2SD755F 2SD756D
OCR Text ... IC = 10 A, IE = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ -- -...f = 1 MHz Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows. D E 400 to 8...
Description Silicon NPN Transistor
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 50mA的一(c)|2VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
Silicon NPN Epitaxial
SMALL SIGNAL TRANSISTOR TO-92MOD, 3 PIN

File Size 30.52K  /  6 Page

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    2SD768 2SD768K

HITACHI[Hitachi Semiconductor]
Part No. 2SD768 2SD768K
OCR Text ...= 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 6 10 40 150 -55 to +150 Unit V V V A A W C C 2SD768(K) ...F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong ...
Description Silicon NPN Epitaxial

File Size 35.66K  /  6 Page

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    2SD787 2SD788

HITACHI[Hitachi Semiconductor]
Part No. 2SD787 2SD788
OCR Text ... Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SD788 Max -- -- -- 2 0.2 800 0.3 -- -- Min 20 20 6 -- -- 100 -- -- -- Typ -- -- -- -- -- ...f = 1 MHz Typ -- -- -- -- -- -- -- 100 20 20 16 6 -- -- 100 -- -- -- DC current transfer ra...
Description Silicon NPN Epitaxial

File Size 30.38K  /  6 Page

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    2SD789

HITACHI[Hitachi Semiconductor]
Part No. 2SD789
OCR Text ...it V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC ...f = 1MHz 1. The 2SD789 is grouped by h FE as follows. 400 to 800 2 2SD789 Maximum Collecto...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 30.04K  /  6 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ...hFE -- IC 200 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 100 160 400 120 300 Ta=75C 25C -25C 80 200 100 40 0.3 1 3 10 30 ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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    2SD874 2SD874A

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD874 2SD874A
OCR Text ...=10 200 VCB=10V Ta=25C fT -- I E Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) 1 3 10 30...f=1MHz Ta=25C Area of safe operation (ASO) Single pulse TC=25C Collector output capacitance C...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 38.73K  /  2 Page

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