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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDAF59N30
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| OCR Text |
...e Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source vo...34A VGS = 0V, IS = 59A dIF/dt =100A/s
(Note 4)
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---246 6.9
34 136 1.4 ---
A A V n... |
| Description |
300V N-Channel MOSFET 34 A, 300 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
760.18K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDAF69N25
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| OCR Text |
...gs
Symbol
VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current...34A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5... |
| Description |
250V N-Channel MOSFET
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| File Size |
571.19K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDH34N40
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| OCR Text |
...to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = Pulsed (Note 1) PD TJ, TSTG Power dissipation Derate a...34A VDD = 200V ID = 34A RG = 4.3 RD = 5.88 VDS = 25V, VGS = 0V f = 1MHz 15 57 17 18 16 72 42 58 3370... |
| Description |
34A, 400V, 0.115Ohm, N-Channel SMPS Power MOSFET
34A, 400V, 0.115 Ohm, N-Channel SMPS Power MOSFET
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| File Size |
143.73K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF2P40
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...34A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -2.0A, di/dt 200A/s, VDD BVDSS, Starting TJ =... |
| Description |
400V P-Channel MOSFET
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| File Size |
569.54K /
8 Page |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
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| OCR Text |
.... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...34A ID = 34A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz 0.067 170 29 83 7 4300 780 230 0.080 0.144 45 ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
47.77K /
8 Page |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFM1310ST
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| OCR Text |
...
N-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on) 100V 34A W 0.070W
1 3 .7 2 (0 .5 4 0 )
1 2 .7 (0 .5 0 0 ) m in .
6 .3 5 (0 .2 5 0 )
1 .0 2 (0 .0 4 0 ) 3 .8 1 (0 .1 5 0 ) 2 p lc s . 6 .6 0 (0 .2 6 0 )
FEATURES
* REPETITIVE A... |
| Description |
NCHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
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| File Size |
23.31K /
2 Page |
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http://
SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
IRFN044SMD
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| OCR Text |
....7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
60V 34A W 0.040W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
* HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT -... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
22.17K /
2 Page |
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IRF[International Rectifier]
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| Part No. |
IRFPS35N50LPBF
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| OCR Text |
...T
VDSS RDS(on) typ. Trr typ. ID
500V 0.125 170ns 34A
Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/d... |
| Description |
SMPS MOSFET
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| File Size |
149.76K /
8 Page |
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it Online |
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Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
IRFY1310M-T257
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| OCR Text |
...ET FOR HI-REL APPLICATIONS
VDS ID(max) RDS(on)
FEATURES
16.38 (0.645) 16.89 (0.665)
13.38 (0.527) 13.64 (0.537)
3.56 (0.140) Dia....34A 21A 136A 100W 0.8W/C -55 to 150C 300C 1.25C/W max.
Notes 1) Pulse Test: Pulse Width 300ms, d... |
| Description |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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| File Size |
20.65K /
2 Page |
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it Online |
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