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  id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 9392    Search Time::2.437ms    
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    IRFE9130

Seme LAB
Part No. IRFE9130
OCR Text ....013) Rad. 0.08 (0.003) VDSS ID(cont) RDS(on) FEATURES * SURFACE MOUNT * SMALL FOOTPRINT -100V -6.1A 0.345 1.39 (0.055) 1.15 (0....3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 20V - 6.1A - 3.8A - 24A ...
Description P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))

File Size 16.50K  /  2 Page

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    NDS9430A NDS9430

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9430A NDS9430
OCR Text ...ximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25C un...3 20 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) 2.5 1.2 1 -55 to 150 W ...
Description Single P-Channel Enhancement Mode Field Effect Transistor

File Size 63.20K  /  7 Page

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    NDS9430 NDS943002

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9430 NDS943002
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 20 (Note 1a) Units V V A W -5.3 -20 2.5 1.2 1 -55 to +175 Power Dissipation for Singl...
Description 30V P-Channel PowerTrench MOSFET

File Size 136.28K  /  5 Page

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    PD54003-E PD54003TR-E PD54003S-E PD54003STR-E

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. PD54003-E PD54003TR-E PD54003S-E PD54003STR-E
OCR Text ... Table 1. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25C) Parameter Drain-source voltage Gate-source volta...3/28 Electrical Characteristics PD54003-E, PD54003S-E 2 Electrical Characteristics TCAS...
Description RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

File Size 404.88K  /  28 Page

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    SI4431 SI4431DY SI4431DYNL

FAIRCHILD[Fairchild Semiconductor]
Part No. SI4431 SI4431DY SI4431DYNL
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...3 -40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note...
Description P-Channel Logic Level PowerTrench MOSFET

File Size 91.90K  /  5 Page

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    SI9934DY SI9934DYL99Z SI9934DYL86Z

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. SI9934DY SI9934DYL99Z SI9934DYL86Z
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...3 A VGS = -2.5 V, VGS = -4.5 V, ID = -5, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -5 A -...
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET 5 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
5 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8

File Size 47.29K  /  3 Page

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    FDS8978

Fairchild Semiconductor
Part No. FDS8978
OCR Text ...ures rDS(ON) = 18m, VGS = 10V, ID = 7.5A rDS(ON) = 21m, VGS = 4.5V, ID = 6.9A High performance trench technology for extremely low rDS(ON) ...3 2 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG ...
Description Dual N-Channel PowerTrench MOSFET

File Size 311.69K  /  9 Page

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