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  high voltage igbts Datasheet PDF File

For high voltage igbts Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    2SC4632LS

Sanyo Semicon Device
Part No. 2SC4632LS
Description NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA high-voltage Amplifier, high-voltage Switching Applications
1200V/10mA high-voltage Amplifier,high-voltage Switching Applications

File Size 26.80K  /  3 Page

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    2SC4631LS

Sanyo Semicon Device
Part No. 2SC4631LS
Description NPN Triple Diffused Planar Silicon Transistor 900V / 300mA high-voltage Amplifier, high-voltage Switching Applications
900V/300mA high-voltage Amplifier,high-voltage Switching Applications

File Size 28.26K  /  3 Page

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    2SC4636LS

Sanyo Semicon Device
Part No. 2SC4636LS
Description NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA high-voltage Amplifier, high-voltage Switching Applications
1800V/10mA high-voltage Amplifier,high-voltage Switching Applications

File Size 30.51K  /  3 Page

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    2SC4634LS

Sanyo Semicon Device
Part No. 2SC4634LS
Description NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA high-voltage Amplifier, high-voltage Switching Applications
1500V/10mA high-voltage Amplifier,high-voltage Switching Applications

File Size 28.64K  /  3 Page

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    2SC4635LS

Sanyo Semicon Device
Part No. 2SC4635LS
Description NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA high-voltage Amplifier, high-voltage Switching Applications
1500V/20mA high-voltage Amplifier,high-voltage Switching Applications

File Size 28.50K  /  3 Page

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    Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. HGTP12N60B3D HGT1S12N60B3DS
Description Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
27A, 600V, UFS Series N-Channel igbts with Anti-Parallel Hyperfast Diode 27 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 124.11K  /  8 Page

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    MICROSEMI[Microsemi Corporation]
Part No. JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3628 JHV3632 JHV3636 JHV3640 JHV3644 JHV3646 JHV3648 JHV3652 JHV3660 JHV3664 JHV3668 JHV3672 JHV3676 JHV368 JHV36H28
Description high voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (&#181;A): 6000; SILICON, voltage MULTIPLIER DIODE
high voltage RECTIFIER ASSEMBLY

File Size 100.08K  /  2 Page

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    HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S

Fairchild Semiconductor Corporation
HARRIS[Harris Corporation]
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
Description 3.3V 72-mc CPLD
14A 600V UFS Series N-Channel igbts
14A, 600V, UFS Series N-Channel igbts
14A/ 600V/ UFS Series N-Channel igbts

File Size 153.41K  /  6 Page

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    HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D
Description 10A 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes 17.5 A, 400 V, N-CHANNEL IGBT, TO-220AB

File Size 36.64K  /  6 Page

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    BUL741

ST Microelectronics, Inc.
STMicroelectronics
Part No. BUL741
Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
high voltage fast-switching NPN Power Transistor

File Size 298.02K  /  10 Page

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For high voltage igbts Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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