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  hfe35 Datasheet PDF File

For hfe35 Found Datasheets File :: 737    Search Time::3.156ms    
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    KSE210 KSE210STU

FAIRCHILD[Fairchild Semiconductor]
Part No. KSE210 KSE210STU
OCR Text ...ymbol BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Curren...5 -1.6 V V V V V MHz pF Units V nA A nA Collector-Emitter Saturation Voltage VBE(sat) VBE(on) ...
Description PNP Epitaxial Silicon Transistor
Feature

File Size 40.62K  /  4 Page

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    Sanyo
Part No. 2SC4108 0432
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6A VCE=5V, IC=8A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings ...5 2.5 0.3 20 160 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CB...
Description NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications
From old datasheet system

File Size 92.78K  /  4 Page

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    Sanyo
Part No. 2SC4160 2SC4160M 2SC4160N
OCR Text ...ain Symbol ICBO IEBO hFE1* hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=5V, IC=10mA 15 10 10 Conditions Ratings m...5 2.5 0.3 Conditions Ratings min typ 20 50 0.8 1.5 max Unit MHz pF V V V V V V s s s IC=2A, IB=0....
Description NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-220
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

File Size 43.87K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SD1964 0664
OCR Text ...ymbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 I...5 2.0 0.2 80 45 90 30 0.5 1.5 1.5 2.5 V V V V MHz s s s 260 min typ max 10 50 Unit A A V Forward ...
Description Power Transistors
From old datasheet system

File Size 51.06K  /  4 Page

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    2SD2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2064
OCR Text ...C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 120V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE...
Description Silicon NPN triple diffusion planar type(For high power amplification)

File Size 49.88K  /  3 Page

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    HE8051

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HE8051
OCR Text ... *VBE(sat) VBE(on) *hFE1 *hFE2 *hFE3 fT Min. 40 25 6 45 85 40 100 Typ. Max. 100 100 0.5 1.2 1 500 Unit V V V nA nA V V V Test Conditions IC=100uA IC=2mA IE=100uA VCB=35V VEB=6V IC=0.8A, IB=80mA IC=0.8A, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5m...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 36.02K  /  3 Page

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    UPA1453 UPA1453H

NEC[NEC]
Part No. UPA1453 UPA1453H
OCR Text ...Time SYMBOL ICBO IEBO hFE1 hFE2 hFE3 MIN. TYP. MAX. -10 -10 UNIT TEST CONDITIONS VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -1 V, IC = -0.1 A VCE = -1 V, IC = -2 A VCE = -2 V, IC = -5 A -0.3 -1.2 1 2.5 1 V V IC = -2 A, IB = -0.2 A IC = -2...
Description PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE

File Size 52.71K  /  6 Page

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    hitachi
Part No. 2SD1471
OCR Text ...nt transfer ratio hFE1* hFE2* 1 hFE3* 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) 2000...5. No license is granted by implication or otherwise under any patents or other rights of any third ...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 31.89K  /  5 Page

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    Matsshita / Panasonic
Part No. 2SD2029 0217
OCR Text ...C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 160V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1...5 3.0 1 Power Transistors PC -- Ta 200 20 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat si...
Description Power Transistors
From old datasheet system

File Size 41.51K  /  3 Page

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    FB1F3P FB1A3M FB1L3N FB1A4M-T1B FB1A4A FB1A4M FB1J3P FB1 FB1L3N-T1B FB1L3N-T2B FB1A3M-T2B FB1A4M-T2B FB1A3M-L FB1L2Q-T2B

NEC[NEC]
NEC Corp.
Part No. FB1F3P FB1A3M FB1L3N FB1A4M-T1B FB1A4A FB1A4M FB1J3P FB1 FB1L3N-T1B FB1L3N-T2B FB1A3M-T2B FB1A4M-T2B FB1A3M-L FB1L2Q-T2B FB1A3M-T1B FB1F3P-L FB1J3P-L FB1A4A-L FB1A4A-T1B FB1A4A-T2B FB1A4M-L FB1F3P-T2B FB1J3P-T2B FB1F3P-T1B FB1J3P-T1B FB1L2Q-L FB1L2Q-T1B FB1L3N-L FB1L2Q
OCR Text ...nce Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 0.5 A, IB = 5 mA VCE = 5.0 V, IC = 100 A - 7 - 10 300 300 135 0.27 0...
Description From old datasheet system
COMPOUND TRANSISTOR
Hybrid transistor

File Size 108.92K  /  8 Page

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For hfe35 Found Datasheets File :: 737    Search Time::3.156ms    
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