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B10C0 1601A MJ15024 R1009 07N70 SP301 16G6H RJK501
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  gt s Datasheet PDF File

For gt s Found Datasheets File :: 2923    Search Time::1.562ms    
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    MCR8DSNT4

ON Semiconductor
Part No. MCR8DsNT4
OCR Text ...)t j = 25 c t j = ? 40 c i gt 5.0 ? 12 ? 200 300 a gate trigger voltage (continuous dc) (note 5) (v d = 12 v, r l = 100 )t j = 25...s = 6.0 k , i t = 16 a(pk), r gk = 1.0 k ) (v d = rated v drm , rise time = 20 ns, pulse width...
Description sensitive Gate silicon Controlled Rectifiers Reverse Blocking Thyristors 8 A, 800 V, sCR

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    ABB SWITZERLAND LTD SEMICONDUCTORS
Part No. 5sTF06T2025 5sTF06T1820
OCR Text ... = 2/3 v drm , t r = 0.3 s, i gt = 2 a 800 a/s (dv d /dt) cr critical rate of rise of off-state voltage v d = 2/3 v drm 1 000 v/s p gavm maximum average gate power losses 3 w i fgm peak gate current 10 a v fgm pea...
Description 875 A, 2000 V, sCR
875 A, 1800 V, sCR

File Size 199.33K  /  14 Page

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    OT406

NXP Semiconductors
Part No. OT406
OCR Text ...cess control n v drm 600 v n i gt 3ma n i tsm 12.5 a (t = 20 ms) n i gt 5 ma (t2 - g+) n i t(rms) 1a table 1. pinning pin description simpli?ed outline graphic symbol 1 main terminal 1 (t1) sot223 2 main terminal 2 (t2) 3 gate (g) 4 mo...
Description Four-quadrant triac, enhanced noise immunity

File Size 70.98K  /  13 Page

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    TOSHIBA
Part No. sF10JZ47 sF10GZ47
OCR Text ...10s t gr 250ns i gp = i gt 2.0 jedec D jeita D toshiba 13 ? 10h1b weight: 1.7 g unit: mm sf10gz47,sf10jz47 2001-07-13 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. ...
Description THYRIsTOR sILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONs

File Size 237.36K  /  6 Page

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    BTB16-600CW3G BTB16-800CW3G

ON Semiconductor
Part No. BTB16-600CW3G BTB16-800CW3G
OCR Text ...) mt2(+), g(-) mt2(-), g(-) i gt 2.0 2.0 2.0 - - - 35 35 35 ma holding current (v d = 12 v, gate open, initiating current = 500 ma) i h...s critical rate of rise of off\state voltage (v d = 0.66 x v drm , exponential waveform, gate open,...
Description Triacs silicon Bidirectional Thyristors

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    Nell Semiconductor Co., Ltd
Part No. 20PT06H 20PT06A 20PT06AI 20PT08AI 20PT08H
OCR Text ...) 1 3 a i = 2xl , t 100 ns g gt r t o - 2 6 3 / t o - 2 2 0 a b t o - 2 2 0 a b i n s u l a t e d t c = 1 0 0 c t c = 8 0 c m a x i m u m g a t e p o w e r p gm w 1 0 t = 2 0 s p t = 1 2 5 o c j t o - 2 6 3 / t o - 2 2 0 a b t o - 2...
Description stansard sCRs, 20A

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    NXP Semiconductors N.V.
Part No. BTA204X-600B
OCR Text ... max. unit bta204x- ...b ...c i gt gate trigger current 2 v d = 12 v; i t = 0.1 a t2+ g+ - - 50 35 ma t2+ g- - - 50 35 ma t2- g- - - 50 35...s off-state voltage exponential waveform; gate open circuit di com /dt critical rate of change of v ...
Description 3Q Hi-Com Triac BTA204X-600B<sOT186A (sOT186A)|<<http://www.nxp.com/packages/sOT186A.html<1<week 32, 2004,;

File Size 119.32K  /  8 Page

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    RUNAU
Part No. KP5000
OCR Text ... p g(av) 5 w ? i gt 300 200 125 ma ma ma v d = 6 v;r l = 3 ohms;t j = - 40 o c v d = 6 v;r l = 3 o...s i tm = 50 a; v d = 67% v drm ? : v g = 30 v; r g = 10 ohms; t r = 0.1 ? s; t p = 20 ?...
Description Power Thyristor

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    Zarlink
Part No. MT88E43B
OCR Text ...gorithm Guard Time stD st/gt Est VDD Vss OsCin OsCout TRIGin TRIGRC TRIGout Figure 1- Functional Block Diagram 53 MT88...s gain should be set according to the nominal Vdd of the application using the information in Figure...
Description CMOs

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    70TPS12PBF10

Vishay Siliconix
Part No. 70TPs12PBF10
OCR Text ...drm 1200 v, 1600 v v tm 1.4 v i gt 100 a t j - 40 c to 125 c (g) 3 2 (a) 1 (k) super to-247 major ratings and characteristics parameter test...s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm /v drm , maximum repetitive peak...
Description Phase Control sCR, 70 A

File Size 130.73K  /  8 Page

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For gt s Found Datasheets File :: 2923    Search Time::1.562ms    
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