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Diodes Inc.
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Part No. |
BAT750-7-f
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OCR Text |
...ualified t o aec-q101 standards f or high reliability characteristic symbol value unit peak repetitive revers e voltage working peak revers e voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r (rms) 28 v average re... |
Description |
0.75A SURfACe MOUNT SCHOTTKY BARRIeR ReCTIfIeR
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File Size |
375.43K /
3 Page |
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Diodes Inc.
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Part No. |
SBM540-13-f
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OCR Text |
...8 0.45 0.59 0.56 0.52 ? ? ? v i f = 5a, t s = 25 c i f = 5a, t s = 125 c i f = 10a, t s = 25 c i f = 10a, t s = 125 c reverse ...e a 3 dim min max a 4.03 4.09 b 6.40 6.61 c .889 nom d 1.83 nom e 1.10 1.14 g .178 nom h 5.01 5.17 j... |
Description |
5A SURfACe MOUNT SCHOTTKY BARRIeR ReCTIfIeR
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File Size |
376.95K /
3 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
SBM340-13-f
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OCR Text |
...57 0.54 0.50 0.44 0.61 0.58 v i f = 3a, t j = 25 c i f = 3a, t j = 125 c i f = 6a, t j = 25 c i f = 6a, t j = 125 c reve...e a 3 dim min max a 4.03 4.09 b 6.40 6.61 c .889 nom d 1.83 nom e 1.10 1.14 g .178 nom h 5.01 5.17 j... |
Description |
3A SURfACe MOUNT SCHOTTKY BARRIeR ReCTIfIeR 3 A, 40 V, SILICON, ReCTIfIeR DIODe
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File Size |
383.72K /
3 Page |
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it Online |
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Cypress Semiconductor Corp.
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Part No. |
DIM200PHM33-f
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OCR Text |
...t case = 125?c dc t p = 1ms i f = 200a i f = 200a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz v ce = 25v, v ge = 0v, f = 1mhz -...e off t d(on) t r q g e on q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns... |
Description |
IGBT Modules - Half Bridge IGBT模块-半桥
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File Size |
200.78K /
9 Page |
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it Online |
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Price and Availability
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