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  dc-2.7 Datasheet PDF File

For dc-2.7 Found Datasheets File :: 263015    Search Time::9.656ms    
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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: ...2 Max 10 1 10 250 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 ...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S21 Parameter Power gain Noise...2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, R...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S21 Parameter Power gain Noise...2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, R...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text ... Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 ...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ... I C( A) (V C E= 4V) 40 125C DC Cur rent Gain h F E 5 j - a( C/W) hFE - IC Characteristics (Typical) t on*t s tg *t f ( s) t ...2 t s tg Swi tchi ng T im e 1 0.5 10 8 0.02 0.05 0.1 0.5 1 5 10 12 0.1 0.5 t on...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ... 10 3 IC t=0.5ms 1ms 10ms DC 100 30 1 0.3 0.1 0.03 0.01 10 3 1 1 3 10 30 100 0.01 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) C...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: ...2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = ...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5079

HITACHI[Hitachi Semiconductor]
Part No. 2SC5079
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: ...2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 24.20K  /  5 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: ...2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE ...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SC5081

HITACHI[Hitachi Semiconductor]
Part No. 2SC5081
OCR Text ...BO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: ...2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE ...
Description Silicon NPN Epitaxial

File Size 24.33K  /  5 Page

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For dc-2.7 Found Datasheets File :: 263015    Search Time::9.656ms    
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