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controlled-avalanche Datasheet PDF File

For controlled-avalanche Found Datasheets File :: 6593 Search Time::1.344ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYX107G BYX105G BYX106G BYX108G
OCR Text	controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers FEATURES * Glass passivated ...
Description	High-voltage soft-recovery controlled avalanche rectifiers
File Size	41.33K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BYX120G
OCR Text	controlled avalanche rectifier Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier FEATURES * Glass passivated * Hig...
Description	High-voltage soft-recovery controlled avalanche rectifier
File Size	21.39K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5Y5305CM
OCR Text	... Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-t...Avalanche Energy (mJ) 300 RG D .U .T IA S VD D A D R IV E R 250 ID -7.2A -10A B...
Description	POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) -55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
File Size	106.37K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	... + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFP250 IRFP250B IRFP250BFP001
OCR Text	...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description	200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A 200V N-Channel MOSFET
File Size	667.05K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001
OCR Text	...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description	200V N-Channel B-FET / Substitute of IRFI630A 200V N-Channel MOSFET
File Size	646.27K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW730 IRFW730B IRFI730B IRFW730BTM IRFW730BTMNL
OCR Text	...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description	400V N-Channel B-FET / Substitute of IRFW730A 400V N-Channel MOSFET
File Size	678.85K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL
OCR Text	...as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt ...
Description	400V N-Channel B-FET / Substitute of IRFW740A 400V N-Channel MOSFET
File Size	676.22K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFY140CM
OCR Text	... Turn-on speed is substantially controlled by L S + LD. Thermal Resistance Parameter RthJC Junction-to-Case RthJA Junction-to-Ambient R...Avalanche Energy (mJ) 250 200 150 100 50 0 I D = 28A V D D = 25V 25 50 75 100 ...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
File Size	248.13K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLW1520A IRLW_I520A IRLW/I520A
OCR Text	...as DUT VGS VDD * dv/dt controlled by RG * IS controlled by Duty Factor D VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt ...
Description	Advanced Power MOSFET
File Size	231.40K / 7 Page	View it Online	Download Datasheet

For controlled-avalanche Found Datasheets File :: 6593 Search Time::1.344ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

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