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hitachi
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| Part No. |
HN62W448SERIES 62W448
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| OCR Text |
...--
t OHZ t BHZ t CLZ t OLZ t blz
*1
1. t CHZ, tOHZ and t BHZ are defined as the time at which the output achieves the open circuit conditions and are not referred to output voltage levels.
6
HN62W448 Series
Timing Waveforms
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| Description |
From old datasheet system
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| File Size |
77.58K /
12 Page |
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it Online |
Download Datasheet
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Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS6VA25616-BC AS6VA25616-TC
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| OCR Text |
...ba ?55ns ub /lb low to low z t blz 10 ? ns 4, 5 ub /lb high to high z t bhz 020ns4, 5 oe high to output in high z t ohz 020ns4, 5 power up time t pu 0?ns4, 5 power down time t pd ?55ns4, 5 undefined/don?t care falling input rising input ... |
| Description |
High Speed, Low Cost, Op Amp; Package: SOT-23; No of Pins: 6; Temperature Range: Automotive 256K X 16 STANDARD SRAM, 55 ns, PBGA48
High Speed, Low Cost, Triple Op-Amp; Package: SOIC; No of Pins: 14; Temperature Range: Automotive
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| File Size |
137.10K /
9 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F8016R6BFAMILY
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| OCR Text |
..., lb enable to low-z output t blz 10 - 10 - ns output enable to low-z output t olz 5 - 5 - ns chip disable to high-z output t hz 0 25 0 25 ns ub , lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25... |
| Description |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
155.79K /
9 Page |
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it Online |
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ELAN Microelctronics Corp .
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| Part No. |
EM23C3220
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| OCR Text |
...0 70 ns byte output set time t blz 10 10 10 10 ns note: 1. measured with device selected at f=5 mhz and output unloaded. 2. this parameter is periodcally sampled and is not 100% tested. 3. output low-impedance delay (tlz) is measured fro... |
| Description |
5V Only 32M-BitM×8/2M×16Read Only Memory(5V单电2M位CMOS ROM)
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| File Size |
44.47K /
5 Page |
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it Online |
Download Datasheet |
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ELAN Microelctronics Corp .
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| Part No. |
EM23C8200
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| OCR Text |
...0 70 ns byte output set time t blz 10 10 10 10 ns note: 1. measured with device selected at f=5 mhz and output unloaded. 2. this parameter is periodcally sampled and is not 100% tested. 3. output low-impedance delay (tlz) is measured fro... |
| Description |
5V Only 8M-BitM×8/512K×16Read Only Memory(5V单电M位CMOS ROM)
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| File Size |
44.55K /
5 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F4016V6DFAMILY
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| OCR Text |
..., lb enable to low-z output t blz 10 - 10 - ns output enable to low-z output t olz 5 - 5 - ns chip disable to high-z output t hz 0 20 0 25 ns ub , lb disable to high-z output t bhz 0 20 0 25 ns output disable to high-z output t ohz 0 20... |
| Description |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
164.52K /
9 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM616U4000BZ
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| OCR Text |
..., ub enable to low-z output t blz 5 - 5 - ns lb , ub valid to data output t ba - 40 - 50 ns chip disable to high-z output t hz 0 25 0 30 ns oe disable to high-z output t ohz 0 25 0 30 ns ub , lb disable to high-z output t bhz 0 25 0 ... |
| Description |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
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| File Size |
150.25K /
9 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM616U4000B
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| OCR Text |
..., lb enable to low-z output t blz 5 - 5 - 5 - ns chip disable to high-z output t hz 0 25 0 25 0 30 ns oe disable to high-z output t ohz 0 25 0 25 0 30 ns output hold from address change t oh 10 - 10 - 15 - ns lb , ub valid to data outp... |
| Description |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
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| File Size |
133.48K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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