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Winbond Electronics Corp
Winbond Electronics, Corp.
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| Part No. |
W29EE011P-90 W29EE011P-15 W29EE011T-15
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| OCR Text |
...hin a byte - load cycle time (t blc ) of 200 m s, after the initial byte - load cycle, the w29ee011 will stay in the page load cycle. additional bytes can then be loaded consecutively. the page load cycle will be terminat ed and the int... |
| Description |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
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| File Size |
184.71K /
20 Page |
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Maxwell Technologies, Inc
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| Part No. |
28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28LV010RT4DB20 28LV010RT4DB25 28LV010RT4DB-20 28LV010RPFS20 28LV010RPFS25 28LV010RT1DB25 28LV010RT1DE25 28LV010RT2DS20 28LV010RT2DS25 28LV010RT2DE20 28LV010RT2DB-20 28LV010RT2DS-20 28LV010RT2DB-25 28LV010RT2DE25 28LV010RT2DI20 28LV010RT2DB25 28LV010RT2DI-25 28LV010RT2DB20 28LV010RT2DI-20 28LV010RT2DE-20 28LV010RT4DE-20 28LV010RT4DS25 28LV010RT4DE25 28LV010RT4DI-20 28LV010RT4DI-25 28LV010RT4DI20 28LV010RT4DI25 28LV010RT4DS-20 28LV010RT4DS-25 28LV010RT4DS20 28LV010RT1FI-25 28LV010RT1FS-20 28LV010RT1FS-25 28LV010RT2FS25 28LV010RT2FS-20 28LV010RT2FI-20 28LV010RT1DE-20 28LV010RPFS-20 28LV010RT1DB20 28LV010RT2FB20 28LV010RT2FE-25 28LV010RT1DI-20 28LV010RT2FS20 28LV010RT4FS-20 28LV010RT2FB-25 28LV010RT2FB25 28LV010RT2FE-20 28LV010RT2FE20 28LV010RT1DS-20 28LV010RT2FE25 28LV010RT1FS20 28LV010RT1FS25 28LV010RT2FS-25 28LV010RT4FS20 28LV010RT1DS25 28LV010RT1FB-20 28LV010RT1FB25 28LV010RT1DB-20 28LV010RT1DS20 28LV010RT4FS25 28LV010RPFB25 28LV010RPDI25 28LV010RPDB20 28LV010RPDE-20 28LV010RPDI-20 28LV010RT1FI-20 28LV010RPFB-20 28LV010RT4FE-20 28LV010RT4FI20 28LV010RPFI-20 MAXWELLTECHNOLOGIES-28LV010RPFI-20 28LV010RPDI20
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| OCR Text |
...v 6 byte load cycle -200 -250 t blc 9, 10, 11 1 1 30 30 s data latch time 2 -200 -250 t dl 9, 10, 11 700 750 - - ns byte load window 2 -200 -250 t bl 9, 10, 11 100 100 -- -- s time to device busy -200 -250 t db 9, 10, 11 100 120 -- -- ns wr... |
| Description |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
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| File Size |
360.92K /
19 Page |
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Silicon Storage Technology, Inc.
Cypress Semiconductor, Corp.
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| Part No. |
SST29VE020-200-4I-EH SST29VE020-200-4C-NH SST29LE020-200-4I-EH SST29LE020-200-4I-WH SST29LE020-200-4C-NH SST29EE020-120-4C-PH SST29EE020-120-4I-WH SST29EE020-120-4C-EH SST29EE020-120-4I-EH
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| OCR Text |
...ithin a byte-load cycle time (t blc ) of 100 s, the sst29ee/le/ve020 will stay in the page-load cycle. additional bytes are then loaded consecu- tively. the page-load cycle will be terminated if no addi- tional byte is loaded into the page ... |
| Description |
4 Mbit (512K x 8/256K x 16) nvSRAM
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1 Mbit (128K x 8) nvSRAM With Real Time Clock
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller EEPROM的| 256KX8 |的CMOS |双酯| 32脚|塑料
EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC EEPROM的| 256KX8 |的CMOS | LDCC | 32脚|塑料
EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC EEPROM的| 256KX8 |的CMOS | TSSOP封装| 32脚|塑料
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| File Size |
780.82K /
26 Page |
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it Online |
Download Datasheet |
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Hitachi,Ltd.
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| Part No. |
HN58V65AI HN58V66AI
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| OCR Text |
...t dl 100 ns byte load cycle t blc 0.3 30 m s byte load window t bl 100 m s write cycle time t wc 10* 4 ms time to device busy t db 120 ns write start time t dw 0* 5 ns reset protect time* 2 t rp 100 m s reset high time* 2, 6 t re... |
| Description |
64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k×8)
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| File Size |
210.65K /
30 Page |
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it Online |
Download Datasheet |
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