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For auto-refresh Found Datasheets File :: 6535 Search Time::1.016ms
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				Micron Technology
Part No.	MT48LC4M32B2B51 MT48LC4M32B2P MT48LC4M32B2F51 MT48LC4M32B2P-7 MT48LC4M32B2TG
OCR Text	...ths: 1, 2, 4, 8, or full page ? auto precharge, includes concurrent auto precharge and auto refresh modes ? self refresh mode (not available on at devices) ? auto refresh C 64ms, 4096-cycle refresh (15.6s/row; commer- cial and industrial) C...
Description	SDR SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
File Size	4,551.83K / 80 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY57V161610DTC-6I
OCR Text	...ower supply Note1) * * * Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface JEDEC sta...
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
File Size	71.51K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V651620BLTC-6 HY57V651620BTC-6 HY57V651620BLTC-55 HY57V651620BLTC-7 HY57V651620BLTC-75 HY57V651620BLTC-8 HY57V651620B HY57V651620BLTC-10 HY57V651620BLTC-10P HY57V651620BLTC-10S HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-55 HY57V651620BTC-10S HY57V651620BTC-8 HY57V651620BTC-7 HY57V651620BTC-75
OCR Text	...power supply Note) * * * Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC st...
Description	CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG223/U COAX, DOUBLE SHIELDED; 4 Banks x 1M x 16Bit Synchronous DRAM
File Size	80.11K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7 HY57V653220BTC-8
OCR Text	... four banks operation * * * * * Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst * - 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ...
Description	4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
File Size	152.09K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text	...ata strobe signal * Distributed auto-refresh cycle in 7.8us * Self-Refresh * Power Down Mode * Variable Write Length Control * Write Latency = CAS Latency - 1 * Programmable CAS Latency and Burst Length CAS Latency = 3, 4 Burst Length = 2, ...
Description	256Mb Network-DRAM
File Size	877.29K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
Part No.	K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
OCR Text	...t * DM for write masking only * Auto & Self refresh * 32ms refresh period (4K cycle) * 66pin TSOP-II * Maximum clock frequency up to 400MHz * Maximum data rate up to 800Mbps/pin ORDERING INFORMATION Part NO. K4D261638F-TC25 K4D261638F-T...
Description	128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
File Size	223.53K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text	...t * DM for write masking only * Auto & Self refresh * 64ms refresh period (8K cycle) * 66pin TSOP-II * Maximum clock frequency up to 300MHz * Maximum data rate up to 600Mbps/pin ORDERING INFORMATION Part NO. K4D551638F-TC33 K4D551638F-T...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	204.60K / 16 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text	...Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM GENERAL DESCRIPTION The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits...
Description	1M x 16 SDRAM
File Size	671.65K / 42 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT40A2G8NRE-083E MT40A4G4NRE-075E
OCR Text	...n some 16gb parts. a10/ap input auto precharge: a10 is sampled during read and write commands to deter- mine whether auto precharge should ...refresh, acti- vate, read, write, or precharge command is being applied. also determines which mode ...
Description	TwinDie 1.2V DDR4 SDRAM
File Size	452.61K / 21 Page	View it Online	Download Datasheet

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