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Ecliptek, Corp.
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| Part No. |
EDI2GG46464V12D
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| OCR Text |
...atures n 4x64kx64 synchronous n access speed(s): t khqv = 9.5, 10, 11,12, 15ns n flow-through architecture n clock controlled registered ba...edge dimm (120 contacts) module, organized as 4x64kx64. the module contains eight (8) synchronous b... |
| Description |
4x64Kx64, 3.3V Synchronous Flow-Through SRAM Card Module(4x64Kx64, 3.3V2ns,同步静态RAM卡模流通结构）) 4x64Kx64.3V的同步流通过的SRAM卡模块（4x64Kx64.3伏，12ns，同步静态内存卡模块（流通结构）
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| File Size |
245.01K /
8 Page |
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it Online |
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TE Connectivity, Ltd.
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| Part No. |
EDI2GG432128V12D
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| OCR Text |
...es high performance, ultra fast access times at a cost per bit benefit over bicmos asynchronous sram based devices. as well as improved cos...edge. this feature relieves the designer the task of devel- oping external write pulse width circui... |
| Description |
4x128Kx32 Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V2ns,同步静态RAM卡模流通结构）) 4x128Kx32同步流通过的SRAM卡模块（4x128Kx18.3伏，12ns，同步静态内存卡模块（流通结构）
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| File Size |
171.15K /
8 Page |
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it Online |
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A-DATA[A-Data Technology]
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| Part No. |
VDS4616A4A-7 VDS4616A4A VDS4616A4A-5 VDS4616A4A-6
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| OCR Text |
...vel Output load capacitance for access time measurement Symbol VIH / VIL Vtrip TR / tF Voutfef CL Value 1.4 / 1.4 1.4 1 1.4 50 Unit V V ns V...edge rate. 3.A new command can be given tRRC after self refresh exit.
Rev 1 December, 2001
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| Description |
Synchronous DRAM(512K X 16 Bit X 2 Banks)
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| File Size |
216.99K /
8 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1373B-83AC
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| OCR Text |
...e previous clock cycle. maximum access delay from the clock rise is 7.5 ns (117-mhz device). write operations are controlled by the byte wri...edge of the clk. bws a bws b bws c bws d input- synchronous byte write select inputs, active low . ... |
| Description |
512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 10 ns, PQFP100
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| File Size |
724.89K /
26 Page |
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it Online |
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ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
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| Part No. |
VDS6616A4A-75 VDS6616A4A VDS6616A4A-5 VDS6616A4A-6 VDS6616A4A-7
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| OCR Text |
...vel Output load capacitance for access time measurement Note: 1. 3.15V VDD 3.6V is applied for VDS6616A4A5. Symbol VIH / VIL Vtrip TR / tF...edge rate. 3.A new command can be given tRRC after self refresh exit.
Rev 1.1 April, 2001
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| Description |
Synchronous DRAM(1M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行）
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| File Size |
210.31K /
8 Page |
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it Online |
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