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  99c Datasheet PDF File

For 99c Found Datasheets File :: 223    Search Time::3.547ms    
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    CR8CM-12A-A8

Renesas Electronics Corporation
Part No. CR8CM-12A-A8
OCR Text ...wave Note1 180 conduction, Tc = 99c 50 Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive...
Description Thyristor Medium Power Use

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    CM100RL-12NF09

Mitsubishi Electric Semiconductor
Part No. CM100RL-12NF09
OCR Text ...on G-E Short C-E Short DC, TC = 99c*1 Pulse Pulse TC = 25C Conditions Ratings 600 20 100 200 100 200 540 Unit V V A A A A W (Note 2) (Note 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM200RL-12NF09 CM200RL-12NF-09

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. CM200RL-12NF09 CM200RL-12NF-09
OCR Text ...nt G-E Short C-E Short DC, TC = 99c*1 Pulse TC = 25C Clamp diode part Clamp diode part Conditions Ratings 600 20 100 200 540 600 100 Unit V V A A W V A (Note 2) (COMMON RATING) Symbol Tj Tstg Viso -- -- -- Parameter Junction temperat...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 103.28K  /  6 Page

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    MAX9361EKA-T MAX9361ESA MAX936008

Maxim Integrated Products
Part No. MAX9361EKA-T MAX9361ESA MAX936008
OCR Text ..................................+99c/W Junction-to-Case Thermal Resistance 8-Pin SOT23...............................................................+80C/W 8-Pin SO..................................................................+40C/mW Con...
Description LVTTL/TTL/CMOS-to-Differential LVECL/ECL Translators

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    SBR200-10G

Sanyo Semicon Device
Part No. SBR200-10G
OCR Text ...Hz resistive load, sine wave Tc=99c 50Hz sine wave, 1 cycle Conditions Ratings 100 105 20 180 --55 to +150 --55 to +150 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Inte...
Description Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier

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    AD5040 AD5063 AD5062 AD5060 AD5061 AD5060ARJZ-2REEL7 AD5040BRJZ-500RL7 AD5040BRJZ-REEL7 AD5060ARJZ-3500RL7 AD5060BRJZ-25

AD[Analog Devices]
Analog Devices, Inc.
Part No. AD5040 AD5063 AD5062 AD5060 AD5061 AD5060ARJZ-2REEL7 AD5040BRJZ-500RL7 AD5040BRJZ-REEL7 AD5060ARJZ-3500RL7 AD5060BRJZ-2500RL7 AD5060ARJZ-3REEL7 AD5060ARJZ-1500RL7 AD5060BRJZ-1500RL7 AD5060ARJZ-2500RL7 AD5060BRJZ-2REEL7 AD5060BRJZ-3REEL7 AD5060BRJZ-1REEL7 AD5060BRJZ-3500RL7 AD5060ARJZ-1REEL7 EVAL-AD5040EB-U1 EVAL-AD5060EB-U1
OCR Text ...50C (Tj Max-Ta)/ JA 229.6C/W 91.99c/W Lead Temperature, Soldering Vapour Phase (60 Sec) Infrared (15 Sec) 300C 220C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stre...
Description Full Accurate 3 V/5 V 14-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23
Full Accurate 3 V/5 V 16-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23
Full Accurate 14/16 Bit Vout nanoDac Buffered 3V/5V Sot 23
Full Accurate 14/16 Bit Vout nanoDac Buffered, 3V/5V, Sot 23

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    DMG9926USD DMG9926USD-13

Diodes Incorporated
Part No. DMG9926USD DMG9926USD-13
OCR Text ...= 0.9 RJA(t) = r(t) * RJA RJA = 99c/W P(pk) D = 0.01 0.01 D = 0.005 D = Single Pulse t1 t2 T J - T A = P * RJA(t) Duty Cycle, D = t1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Trans...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 152.58K  /  6 Page

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    BT139 BT139-800E BT139-800G BT139-800H BT139-500 BT139-500E BT139-500F BT139-500G BT139-500H BT139-600 BT139-600E BT139-

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT139 BT139-800E BT139-800G BT139-800H BT139-500 BT139-500E BT139-500F BT139-500G BT139-500H BT139-600 BT139-600E BT139-600F BT139-600G BT139-600H BT139-800 BT139-800F BT139-600/B
OCR Text ...oidal currents, f = 50 Hz; Tmb 99c. VGT(Tj) VGT(25 C) 150 1.6 1.4 1.2 1 BT136 Tj initial = 25 C max 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Max...
Description Connector Adapter; Convert From:BNC Coaxial Plug; Convert To:Dual Binding Posts; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Triacs sensitive gate
Triacs high noise immunity
TRIAC 16A/600V

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    DMN2009LSS-13

Diodes Incorporated
Diodes Inc.
Part No. DMN2009LSS-13
OCR Text ...= 0.9 RJA(t) = r(t) * RJA RJA = 99c/W P(pk) D = 0.02 0.01 D = 0.01 D = 0.005 t1 D = Single Pulse t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 0.001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 8 Tra...
Description 5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 140.21K  /  5 Page

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    MRF6VP2600HR6 MRF6VP2600HR610 COPPERWIRE COPPERFOIL T491D106K035AT 5093NW20R00J ATC100B101JT500XT ATC100B102JT50XT CDR33

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. MRF6VP2600HR6 MRF6VP2600HR610 COPPERWIRE COPPERFOIL T491D106K035AT 5093NW20R00J ATC100B101JT500XT ATC100B102JT50XT CDR33BX104AKYS C1812C224J5RAC ATC200B203KT50XT
OCR Text ...nction to Case Case Temperature 99c, 125 W CW, 225 MHz, 50 Vdc, IDQ = 2600 mA Case Temperature 64C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ = 150 mA Case Temperature 81C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ = 150 mA Symbol RJC Value (2,3) 0.20 0.14...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 1,437.60K  /  19 Page

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