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HYAAM 80050 PD3016 U2A2A1 C2983 1N5237B 2SK356 A1104
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  6a d Datasheet PDF File

For 6a d Found Datasheets File :: 10668    Search Time::1.703ms    
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    H8205A

Hi-Sincerity Mocroelectronics
Part No. H8205A
OCR Text ... enhancement -mode mosfet (20v, 6a) description this n-channel 2.5v specified mosfet is a rugged gate version of advanced trench process...d =5.2a; r ds(on) =25m ? @v gs =4.5v, i d =6a ? high density cell design for ultra low on-resistan...
Description dual N-Channel Enhancement-Mode MOSFET (20V, 6a)

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    FDP12N5012

Fairchild Semiconductor
Part No. FdP12N5012
OCR Text ...5 (typ.)@ v gs = 10v, i d = 6a ? low gate charge ( typ. 22nc) ? low c rss ( typ. 11pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field e...
Description N-Channel MOSFET 500V, 11.5A, 0.65Ω

File Size 485.57K  /  10 Page

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    BUV62 BUV6209 BUV62.MOD

Seme LAB
SEMELAB LTD
Part No. BUV62 BUV6209 BUV62.MOd
OCR Text ... 1.2 i c = 16a i b = 1.6a 0.9 t c = 100c 1.5 i c = 24a i b = 3a 1.2 v ce(sat) (1) collector-emitter satur...d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 ...
Description FAST SWITCHING NPN POWER TRANSISTOR
40 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AE

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    International Power Sources
Part No. PU200-14B PU200-14C
OCR Text ...n/a n/a n/a 200w pu200-14 24v 0.6a 8.4a 2% n/a n/a n/a 200w pu200-16 30v 0.5a 6.7a 2% n/a n/a n/a 200w pu200-18 48v 0.3a 4.2a 2% n/a n/a n/a...d. com. com. fan pu200-13, pu200-14 #1 #1 #1 ret. ret. pu200-16, pu200-18 pu200-23, pu200-24 ou...
Description Switching power supply, 200W. Output #1: Vnom 24V, Imin 0.6a, Imax 8.4A.

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    ST Microelectronics
Part No. STP6N25
OCR Text ...ntinuous) at t c = 100 o c4 2.6a i dm ( ) drain current (pulsed) 24 24 a p tot total dissipation at t c = 25 o c7035w derating factor 0...d < 1%) 6a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) ...
Description OLd PROdUCT: NOT SUITABLE FOR NEW dESIGN-IN

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    IXTP12N50PM

IXYS Corporation
Part No. IXTP12N50PM
OCR Text ... a r ds(on) v gs = 10v, i d = 6a, note 1 500 m polar tm power mosfet (electrically isolated tab) n-channel enhancement mode avalanche rated fast intrinsic diode ixtp12n50pm symbol test conditions maximum ratings v d...
Description PolarTM Power MOSFET

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    AOTF12N65 AOT12N65

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AOTF12N65 AOT12N65
OCR Text ...e on-resistance v gs =10v, i d =6a reverse transfer capacitance i f =12a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =6a forward transconductance electrical characteristics (t ...
Description 650V, 12A N-Channel MOSFET

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    NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD4.3A NNCD4.7A NNCD7.5A NNCD3.3A NNCD3.6A NNCD9.1A NNCD8.2A NNCD10A NNCD11A NNCD1

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NNCd5.1A NNCd5.6a NNCd6.2A NNCd6.8A NNCd4.3A NNCd4.7A NNCd7.5A NNCd3.3A NNCd3.6a NNCd9.1A NNCd8.2A NNCd10A NNCd11A NNCd12A NNCd3.9A NNCd7.5A-AZ NNCd9.1A-AZ
OCR Text ...Type Number MIN. NNCd3.3A NNCd3.6a NNCd3.9A NNCd4.3A NNCd4.7A NNCd5.1A NNCd5.6a NNCd6.2A NNCd6.8A NNCd7.5A NNCd8.2A NNCd9.1A NNCd10A NNCd11A...d Voltage (kV) TEST CONdITION MAX. 20 10 5 5 5 5 5 5 2 0.5 0.5 0.5 0.2 0.2 0.2 VR (V) 1.0 1.0 ...
Description 100 W, UNIdIRECTIONAL, SILICON, TVS dIOdE, dO-34
ELECTROSTATIC dISCHARGE NOISE CLIPPING dIOdES 400 mW TYPE 静电放电噪声裁剪二极00毫瓦

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    AOTF12N60FD

Alpha & Omega Semiconductors
Part No. AOTF12N60Fd
OCR Text ...urceonresistance v gs =10v,i d =6a reversetransfercapacitance i f =12a,di/dt=100a/ m s,v ds =100v v gs =0v,v ds =25v,f=1mhz switching parameters i s =12a,v gs =0v v ds =40v,i d =6a forwardtransconductance a.thevalueofr q ja ismeasuredwitht...
Description 600V, 12A N-Channel MOSFET

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