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  64mbit 1m x 16bit x 4 banks by Datasheet PDF File

For 64mbit 1m x 16bit x 4 banks by Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5

Hynix Semiconductor
Part No. HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description 4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power

File Size 97.47K  /  11 Page

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    A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L

AMIC Technology
Part No. A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L
Description 45ns 1m x 16bit CMOS dynamic ram with EDO page mode
50ns 1m x 16bit CMOS dynamic ram with EDO page mode
60ns 1m x 16bit CMOS dynamic ram with EDO page mode

File Size 227.88K  /  25 Page

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    M28W640FSU M28W640FSU-ZA M28W640FSU-ZAE M28W640FSU-ZAF M28W640FSU-ZAT M28W640FSU70ZA1 M28W640FSU70ZA1E M28W640FSU70ZA1F

STMICROELECTRONICS[STMicroelectronics]
Part No. M28W640FSU M28W640FSU-ZA M28W640FSU-ZAE M28W640FSU-ZAF M28W640FSU-ZAT M28W640FSU70ZA1 M28W640FSU70ZA1E M28W640FSU70ZA1F M28W640FSU70ZA1T M28W640FSU70ZA6 M28W640FSU70ZA6E M28W640FSU70ZA6F M28W640FSU70ZA6T M28W320FSU M28W320FSU70ZA1 M28W320FSU70ZA1E M28W320FSU70ZA1F M28W320FSU70ZA6 M28W320FSU70ZA6E M28W320FSU70ZA6F M28W320FSU70ZA6T M28W320FSU-ZA M28W320FSU-ZAE M28W320FSU-ZAF M28W320FSU-ZAT M28W320FSU70ZA1T
Description 32Mbit (2Mb x16) and 64mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories

File Size 272.47K  /  49 Page

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    M28W320FST70ZA6E M28W320FST70ZA1 M28W320FST70ZA1E M28W320FST70ZA1F M28W320FST70ZA1T M28W320FST70ZA6 M28W320FST70ZA6T M28

STMICROELECTRONICS[STMicroelectronics]
Part No. M28W320FST70ZA6E M28W320FST70ZA1 M28W320FST70ZA1E M28W320FST70ZA1F M28W320FST70ZA1T M28W320FST70ZA6 M28W320FST70ZA6T M28W320FST M28W640FSB M28W640FSB70ZA1 M28W640FSB70ZA1E M28W640FSB70ZA1F M28W640FSB70ZA1T M28W640FSB70ZA6 M28W640FSB70ZA6E M28W640FSB70ZA6F M28W640FSB70ZA6T M28W640FST M28W640FST70ZA1 M28W640FST70ZA1E M28W640FST70ZA1F M28W640FST70ZA1T M28W640FST70ZA6 M28W640FST70ZA6E M28W640FST70ZA6F M28W640FST70ZA6T M28W320FST70ZA6F M28W320FSB M28W320FSB70ZA1 M28W320FSB70ZA1E M28W320FSB70ZA1F M28W320FSB70ZA1T M28W320FSB70ZA6 M28W320FSB70ZA6E M28W320FSB70ZA6F M28W320FSB70ZA6T
Description 32Mbit (2Mb x16) and 64mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

File Size 295.72K  /  55 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
Description 16M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    http://
Maxwell Technologies, Inc
Part No. 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPFH 72SD3232
Description 1 Gbit SDRAM 32-Meg x 32-Bit x 4-banks 32M x 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg x 32-Bit x 4-banks 1千兆位SDRAM2梅格× 32位4,银

File Size 597.29K  /  40 Page

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    TB62708N EE08582

Toshiba Semiconductor
Part No. TB62708N EE08582
Description 16bit SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER
From old datasheet system
16bit SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS

File Size 398.99K  /  11 Page

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    A43L2616V-6PH A43L2616V-7PH

AMIC Technology
Part No. A43L2616V-6PH A43L2616V-7PH
Description Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1m x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1m x 16bit x 4banks synchronous DRAM

File Size 862.91K  /  41 Page

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    K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S510432M-TC75 K4S510432M-TL1H K4S510432M-TL1L K4S510432M-TL75

Samsung Electronic
Samsung semiconductor
Part No. K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S510432M-TC75 K4S510432M-TL1H K4S510432M-TL1L K4S510432M-TL75
Description 32M x 4Bit x 4 banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 banks Synchronous DRAM LVTTL

File Size 108.78K  /  11 Page

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    K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R44

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
Description 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size 4,046.09K  /  64 Page

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For 64mbit 1m x 16bit x 4 banks by Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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