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Hitachi,Ltd.
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Part No. |
HD407A4669 HCD404669
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OCR Text |
...92 1,152 64-pin plastic qfp (fp-64a) hd4046612 hd4046612h 12,288 hd404669 hd404669h 16,384 hcd404669 hcd404669 16,384 chip * 1 * 2 mask rom (high-speed version) hd40a4668 hd40a4668h 8,192 64-pin plastic qfp (fp-64a) hd40a46612 hd40a46612h ... |
Description |
Low-Voltage AS Microcomputers with On-Chip DTMF Generation Circuit(带双音多频电路的低电压微计算 低电压如同在微机芯片的DTMF产生电路(带双音多频电路的低电压微计算机
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File Size |
935.89K /
142 Page |
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IRF[International Rectifier]
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Part No. |
IRFZ48NSPBF IRFZ48NLPBF
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OCR Text |
...VDSS = 55V RDS(on) = 0.014 ID = 64a
S
Advanced HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw... |
Description |
HEXFET Power MOSFET
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File Size |
291.52K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRFZ48N IRFZ48NPBF
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OCR Text |
...5V RDS(on) = 14m
G S
ID = 64a
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th... |
Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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File Size |
100.17K /
8 Page |
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STMicroelectronics N.V.
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Part No. |
BYT16P-400
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OCR Text |
...ee figure 11 75 ns di f /dt = - 64a/ m s 50 i rm di f /dt = - 32a/ m s 2.2 a di f /dt = - 64a/ m s 2.8 turn-off switching characteristics (without series inductance) symbol test conditions min. typ. max. unit c= v rp v cc t j = 100 cv cc =... |
Description |
Fast Recovery Rectifier Diodes(快速恢复整流二极管) 快恢复整流二极管(快速恢复整流二极管
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File Size |
62.11K /
5 Page |
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IXYS[IXYS Corporation]
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Part No. |
IXGR32N60CD1
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OCR Text |
...3V
VGE = 15V
1.25
IC = 64a
IC - Amperes
60 40 20
5V 7V
1.00
IC = 32A IC = 16A
0.75
0
0
1
2
3
4
5
0.50
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High T... |
Description |
HiPerFAST IGBT with Diode ISOPLUS247
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File Size |
567.82K /
5 Page |
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it Online |
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Price and Availability
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