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  600v 8a Datasheet PDF File

For 600v 8a Found Datasheets File :: 1170    Search Time::2.484ms    
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    FFPF08S60ST12

Fairchild Semiconductor
Part No. FFPF08S60ST12
OCR Text ... ? power switching circuits 8a, 600v stealth tm ii rectifier the ffpf08s60st is stealth tm ii rectifier with soft recovery characteristics. it is silicon nitride passivated ion-implanted epi- taxial planar construction. this device is ...
Description 8a, 600v STEALTHTM II Rectifier

File Size 265.06K  /  5 Page

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    SKB04N6007

Infineon Technologies AG
Part No. SKB04N6007
OCR Text ...cleaners ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavi...8a 10a 12a t c , case temperature t c , case temperature figure 3. power dissipation as ...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,147.37K  /  13 Page

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    QM400HA-2H

Mitsubishi Electric Semiconductor
Part No. QM400HA-2H
OCR Text ...-- -- -- -- -- -- 75/100 -- VCC=600v, IC=400A, IB1=-IB2=8a -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 8.0 8.0 600 2.5 3.5 1.8 -- 3.0 16 3.0 0.04 0.175 0.02 Unit mA mA...
Description 400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 68.64K  /  5 Page

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    QM400HA-2HB

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM400HA-2HB
OCR Text ...n. -- -- -- -- -- -- 750 -- VCC=600v, IC=400A, IB1=800mA, -IB2=8.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ....8a IB=0.1A 300 IB=80mA 200 IB=0.2A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 2 3 4 5 7 10 2 DC CURR...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 73.90K  /  5 Page

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    SGD04N60

Infineon Technologies AG
Part No. SGD04N60
OCR Text ... inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...8a 10a 12a t c , case temperature t c , case temperature figure 3. power dissipation as a function...
Description Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 271.27K  /  12 Page

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    STB8NM60D

STMicroelectronics
Part No. STB8NM60D
OCR Text ...) i d p tot stb8nm60d stp8nm60d 600v 600v < 1.0 ? < 1.0 ? 8a 8a 100w 100w 1 2 3 1 3 to-220 d2pak stb8nm60d stp8nm60d n-channel 600v - 0.9 ? - 8a - to-220/d 2 pak fast diode mdmesh? power mosfet www.st.com order codes sales type marking pa...
Description N-CHANNEL Power MOSFET

File Size 740.60K  /  13 Page

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    QM400HA-24

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. QM400HA-24
OCR Text ...in. -- -- -- -- -- -- 75 -- VCC=600v, IC=400A, IB1=-IB2=8a -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 8.0 8.0 600 3.0 3.5 1.8 -- 3.0 18 3.0 0.04 0.175 0.02 Unit mA mA...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 69.28K  /  5 Page

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    IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IPD60R380C6

Infineon Technologies AG
Part No. IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IPD60R380C6
OCR Text 600v CoolMOSTM C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600v CoolMOSTM C6 P...8a, RG= 3.4 (see table 20) Fall time tf 9 1) Co(er) is a fixed capacitance that gives the same s...
Description 10.6 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Metal Oxide Semiconductor Field Effect Transistor

File Size 2,035.33K  /  19 Page

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    QM400HA-24B

Mitsubishi Electric Semiconductor
Part No. QM400HA-24B
OCR Text ...n. -- -- -- -- -- -- 750 -- VCC=600v, IC=400A, IB1=800mA, -IB2=8.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ....8a IB=0.1A 300 IB=80mA IB=0.2A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLEC...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.97K  /  5 Page

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    16N60

Fairchild Semiconductor
Part No. 16N60
OCR Text 600v n-channel mosfet fcp16n60 / fcpf16n60 600v n-channel mosfet features ?650v @t j = 150 c ?typ. r ds(on) = 0.22 ? ultra low gate ch...8a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 16a, di/dt 200a/ s, v dd bv d...
Description FCP16N60

File Size 1,122.30K  /  10 Page

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For 600v 8a Found Datasheets File :: 1170    Search Time::2.484ms    
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