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  550m Datasheet PDF File

For 550m Found Datasheets File :: 5307    Search Time::1.531ms    
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    MUN5136DW1T1 MUN5137DW1T1 MUN5115DW1T1 MUN5131DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5116DW1T1 MUN

Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
Part No. MUN5136DW1T1 MUN5137DW1T1 MUN5115DW1T1 MUN5131DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5116DW1T1 MUN5130DW1 MUN5130DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5132DW1T1
OCR Text ....) 188 (Note 1.) 208 (Note 2.) -55 to +150 Unit mW mW/C C/W C/W C DEVICE MARKING INFORMATION See specific marking information in the ...0M 2.2 47 MUN5136DW1T1 (Note 3.) SOT-363 0N 100 100 MUN5137DW1T1 (Note 3.) SOT-363 0P 47 22 ELECTRIC...
Description Dual Bias Resistor Transistors 双偏置电阻晶体管

File Size 278.19K  /  11 Page

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    BU408 BU406H BU406 BU406TU

FAIRCHILD[Fairchild Semiconductor]
Part No. BU408 BU406H BU406 BU406TU
OCR Text ...Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol ICES Pa...0m A IB = 10 mA IB = 80 IB = 60 mA 100 3 mA IB = 40 2 IB = 20mA 1 10 0 0 1 2 3 4...
Description NPN Epitaxial Silicon Transistor
High Voltage Switching

File Size 46.37K  /  5 Page

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    IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF

IRF[International Rectifier]
Part No. IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706TRL IRFR3706TRR IRFU3706PBF
OCR Text ... 20 12 75 53 280 88 44 0.59 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. --- --- --- Max. 1.7 50 110 Units C/...
Description 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 131.57K  /  10 Page

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    STLC60133

STMicroelectronics
Part No. STLC60133
OCR Text ...l = 33 Rl = 100 90 -40 -45 -50 -55 Min. Typ. 400 140 -47 -52 Max. Unit V/us MHz dBc DTHD Differential THD (2) dBc IMD Single ended IMD -54 -60 -70 -75 dBc DIMD Differential IMD (2) -66 -72 5 dBc A 2 4 10 ...
Description XDSL LINE DRIVER

File Size 90.30K  /  9 Page

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    TND017 TND017MP TND017SW

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. TND017 TND017MP TND017SW
OCR Text ... -40 to +85 Internally Limited -55 to +150 Unit V A V W W W V C C C Any and all SANYO products described or contained herein do not have ...0m m2 x0 .8m m) 0.5 1.8 2.0 0 Mounted on --40 --20 a ceramic board (1200mm2x...
Description CONNECTOR ACCESSORY
Lowside Power Switch Lamp, Solenoid, and Motor-Driving Applications

File Size 50.23K  /  5 Page

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    DT014

Diodes Incorporated
Part No. DT014
OCR Text ...2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356...0m s 10 m s 0.1 0.01 0.1 1.0 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Ma...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 71.97K  /  4 Page

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    DT455N

DIODES[Diodes Incorporated]
Part No. DT455N
OCR Text ...2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356...0m s ms 10 s 0 s ID, DRAIN CURRENT (A) 1 dc 1s 10 s 0.1 VGS = 10V SINGLE PU...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 87.56K  /  4 Page

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    DT456P

DIODES[Diodes Incorporated]
Part No. DT456P
OCR Text ...2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356...0m s 0 s O S( s -ID, DRAIN CURRENT (A) 10 m s 1.0 dc 10 s 0.1 ...
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 72.57K  /  4 Page

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    FTD1011

SANYO[Sanyo Semicon Device]
Part No. FTD1011
OCR Text ...gs -20 10 --3 -15 0.8 1.0 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown...0m s Switching Time, SW Time -- ns 2 100 7 5 3 2 td(off) tf 3 2 --1.0 7 5 3 2 --0.1 7...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 28.94K  /  4 Page

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    FTD1012

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. FTD1012
OCR Text ... --30 20 --3 -15 0.8 1.0 150 --55 to +150 Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) V...0m s io n( Operation in this area is limited by RDS(on). Ta = 25 C ) --1.0 ...
Description Load Switching Applications 负荷开关应
P-Channel Silicon MOSFET Load Switching Applications

File Size 28.66K  /  4 Page

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For 550m Found Datasheets File :: 5307    Search Time::1.531ms    
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