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  50-p sp1 Datasheet PDF File

For 50-p sp1 Found Datasheets File :: 182    Search Time::1.953ms    
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    ALD1103SBL ALD1103PBL

Advanced Linear Devices
Part No. ALD1103SBL ALD1103PBL
OCR Text ...nductance drain source r ds(on) 50 75 w v ds = 0.1v v gs = 5v 180 270 w v ds = -0.1v v gs = -5v on resistance drain source on resistan...p - channel test parameter symbol min typ max unit conditions min typ max unit conditions ald1103 ...
Description DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

File Size 98.30K  /  9 Page

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    SE5023L SE5023L-EK1 SE5023L-R SE5023L-DS

Skyworks Solutions Inc.
Part No. SE5023L SE5023L-EK1 SE5023L-R SE5023L-DS
OCR Text ...in rf input power, rfout into 50 ? match, t case_max = 85c - 6 dbm t stg storage temperature range -40 160 c t j maximum jun...p out = 26 dbm, 54 mbps, 64 qam - 600 - ma i qc quiescent current no rf - 300 - ma i off...
Description 5 GHz, 26dBm Power Amplifier with Power Detector Preliminary Information

File Size 235.21K  /  11 Page

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    APTC60DSKM45T1G

Microsemi Corporation
Part No. APTC60DSKM45T1G
OCR Text ... to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink...
Description Dual Buck chopper Super Junction MOSFET Power Module

File Size 252.18K  /  7 Page

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    APTGT100DA60T1G

Microsemi Corporation
Part No. APTGT100DA60T1G
OCR Text ...me 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? 70 ns t j = 25c 0.4 e on turn on energy t j = ...
Description Boost chopper Trench Field Stop IGBT? Power Module

File Size 272.05K  /  5 Page

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    SSM6J501NU

Toshiba Semiconductor
Part No. SSM6J501NU
OCR Text ... -1.0 r ds (on) ? ta 0 ? 50 0 50 150 10 100 -4.0 a / -1.8 v -4.0 a / -2.5 v -4.0 a / -4.5 v 50 drain?source voltage v ds (v) ...p d ? ta power dissipation p d (mw) 1000 0 200 120 100 140 400 800 160 80 60 40 20 0 -20 ...
Description Power Management Switch Applications

File Size 182.77K  /  6 Page

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    APTGT30A170T1G

Microsemi Corporation
Part No. APTGT30A170T1G
OCR Text ...dc forward current t c =80c 50 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 50a v ge = 0v t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 14 q ...
Description Phase leg Trench Field Stop IGBT? Power Module

File Size 275.70K  /  5 Page

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    APTGF50H60T1G

Microsemi Corporation
Part No. APTGF50H60T1G
OCR Text ...collector current t c = 80c 50* i cm pulsed collector current t c = 25c 230 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 125c 100...
Description Full - Bridge NPT IGBT Power Module

File Size 313.51K  /  6 Page

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    APTGT50DH60T1G

Microsemi Corporation
Part No. APTGT50DH60T1G
OCR Text ...ollector current t c = 80c 50* i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a...
Description Asymmetrical - Bridge Trench Field Stop IGBT Power Module

File Size 203.46K  /  5 Page

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    APTGT30A60T1G

Microsemi Corporation
Part No. APTGT30A60T1G
OCR Text ...wn voltage 600 v t c = 25c 50 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 60 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 90 w rbsoa rev...
Description Phase leg Trench Field Stop IGBT? Power Module

File Size 271.28K  /  5 Page

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    APTGF30H60T1G

Microsemi Corporation
Part No. APTGF30H60T1G
OCR Text ...l to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink...
Description Full - Bridge NPT IGBT Power Module

File Size 312.22K  /  6 Page

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For 50-p sp1 Found Datasheets File :: 182    Search Time::1.953ms    
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