|
|
 |
United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
|
Part No. |
CHA2069RAF_24 CHA2069RAF CHA2069RAF/24
|
OCR Text |
...ils] and a spacing of less than 400m [16 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a ... |
Description |
Circular Connector; No. of Contacts:100; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:23-35 RoHS Compliant: No 18-31GHz Low Noise Amplifier 18 - 31GHz之间低噪声放大器
|
File Size |
169.36K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
|
Part No. |
CHA5093TCF_24 CHA5093TCF CHA5093TCF/24
|
OCR Text |
...ils] and a spacing of less than 400m [16 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a ... |
Description |
24-26GHz High Power Amplifier 24 - 26GHz高功率放大器
|
File Size |
151.10K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
United Monolithic Semic... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
|
Part No. |
CHA5390TBF_24 CHA5390TBF CHA5390TBF/24
|
OCR Text |
...ils] and a spacing of less than 400m [16 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a ... |
Description |
24-30GHz Medium Power Amplifier 24 - 30GHz的中等功率放大器
|
File Size |
167.02K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
United Monolithic Semic... UMS[United Monolithic Semiconductors]
|
Part No. |
CHM1290REF_24 CHM1290REF CHM1290REF/24
|
OCR Text |
...ils] and a spacing of less than 400m [16 mils] from the centres of two adjacent vias. The via grid should cover the whole space under the ground pad and the vias closest to the RF ports should be located near the edge of the pad to allow a ... |
Description |
20-30GHz SUB-HARMONICALLY PUMPED MIXER
|
File Size |
196.07K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SUMIDA[Sumida Corporation]
|
Part No. |
CMD4D11 CMD4D06 CMD4D08
|
OCR Text |
...(A) *1 950m 770m 750m 620m 500m 400m 300m 240m 180m 160m(123m) 194m(149m) 276m(212m) 335m(258m) 508m(391m) 766m(589m) 1.162(894m) 1.658(1.326) 2.534(2.027) 3.304(2.643) 1.2 1.0 810m 710m 580m 480m 370m 320m 260m 210m 850m 800m 650m 570m 450... |
Description |
POWER INDUCTORS
|
File Size |
172.05K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SUMIDA[Sumida Corporation]
|
Part No. |
CMD6D11B CMD5D11 CMD5D13
|
OCR Text |
...80(2.33)
940m 800m 650m 540m 400m 360m 320m 260m 230m 200m
1.160 1.060 900m 830m 580m 540m 430m 300m 270m 200m
81m( 65m) 106m( 85m) 144m(115m) 187m(150m) 300m(240m) 431m(345m) 637m(510m) 875m(700m)
1.90 1.50 1.40 1.00 950m 800m ... |
Description |
POWER INDUCTORS
|
File Size |
109.79K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
SUMIDA[Sumida Corporation] SUMIDA CORPORATION. Sumida, Corp.
|
Part No. |
CR75 CR105 CR10D37 CR75-151KC SUMIDACORP-CR10D37-2R7MC CR75-1R2MB CR75-4R7MB
|
OCR Text |
...m 720m 660m 580m 510m 490m 420m 400m 360m 340m 67.8m 76.4m 87.0m 97.0m 108.0m 123.5m 139.0m 163.8m 168.8m 211.3m 242.5m 282.5m 370.0m 483.8m 627.0m 693.0m 861.5m 1.02 1.28 1.50 1.94 2.20 2.55 3.04 2.64 2.36 2.20 1.95 1.80 1.62 1.48 1.30 1.2... |
Description |
POWER INDUCTORS <SMD Type> POWER INDUCTORS POWER INDUCTOR 150UH 0.58A SMD 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
|
File Size |
105.51K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
Part No. |
D1024UK
|
OCR Text |
... 40
Pout W
18 16 14 12
f = 400M H z Id q = 0 .4 A Vds = 28V
G a in dB
30 20
f
30 20 10 0 0 6
10 0 0
= 400M H z Id q = 0 .4 A Vds = 28V
40 30 20
10 8
2
4
P in
6
W
8
10
Pout D r a in E ffic ie n c ... |
Description |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSHPULL 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL
|
File Size |
68.25K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|