...
10.00.3
8.50.2 6.00.5
3.40.3
Unit: mm
1.00.1
q q q
High foward current transfer ratio hFE High-speed switching N type pack...V
1.50.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.80.1
0.5max.
s Absolute Max...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...1262A
10.00.3
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
High foward current transfer ratio hFE High-speed switching...V
1.50.1
1.5max.
1.1max.
10.5min.
2.0
0.80.1
0.5max.
s Absolute Maximum Rati...
...2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
s Features
q q q
7.50.2 Solder Dip 4.0 1...V
emitter voltage 2SB941A Emitter to base voltage Peak collector current Collector current Collec...
Description
Silicon PNP epitaxial planar type power transistor Silicon PNP epitaxial planar type(For low-frequency power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR
...2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
s Features
q q q
7.50.2 Solder Dip 4.0 1...V
emitter voltage 2SB942A Emitter to base voltage Peak collector current Collector current Collec...
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)
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