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SEOUL[Seoul Semiconductor]
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| Part No. |
SSC-MWT823N
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| OCR Text |
...FM conditions is Pulse width Tw 300ms, Duty ratio 1/10.
3. Electro-Optical Characteristics
Parameter Forward Voltage (per die) Reverse Current (per die) Luminous Intensity*1 Peak Luminous Intensity vs. Drive Current*2 Illumination*3 Vie... |
| Description |
TOP LED DEVICE
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| File Size |
349.85K /
11 Page |
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it Online |
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Silicon Touch Technolog...
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| Part No. |
PS222L
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| OCR Text |
...ower good input ? built-in 300ms power good delay ? ac on 75ms delay for uv/oc protection ? 38ms pson/ control de-bounce ? 14us de-bounce for noise immunity ? wide power supply range (4.2v~16v) ? special care for ac powe... |
| Description |
Over/Under-voltage protection and lock out
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| File Size |
138.14K /
13 Page |
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it Online |
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DIODES[Diodes Incorporated]
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| Part No. |
MMST4401
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| OCR Text |
...re. 2. Pulse test: Pulse width 300ms, duty cycle 2%.
DS30084 Rev. 3P-1
1 of 3
MMST4401
Electrical Characteristics
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 3/4 3/4 20 40 ... |
| Description |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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| File Size |
55.67K /
3 Page |
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it Online |
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DIODES[Diodes Incorporated]
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| Part No. |
MMDT4413
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| OCR Text |
...
3. Pulse test: Pulse width 300ms, duty cycle 2%.
DS30121 Rev. 3P-1
2 of 4
MMDT4413
NEW PRODUCT
Electrical Characteristics, PNP 4403 Section
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage C... |
| Description |
COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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| File Size |
57.05K /
4 Page |
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it Online |
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DIODES[Diodes Incorporated]
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| Part No. |
MMDT3904S
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| OCR Text |
...re. 2. Pulse test: Pulse width 300ms, duty cycle 2%.
DS30192 Rev. 2P-5
1 of 2
MMDT3904S
ADVANCE INFORMATION
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-... |
| Description |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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| File Size |
57.44K /
2 Page |
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it Online |
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Semelab PLC
SEME-LAB[Seme LAB]
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| Part No. |
MCA104
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| OCR Text |
...
-- 300
* Pulse test tp = 300ms ,
d
2%
DYNAMIC CHARACTERISTICS
Parameter
fT Cob Cib hfe Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain
(Tcase = 25C unless otherwise stated)
NPN DEV... |
| Description |
Multi-Chip Array Two NPN and Two PNP High Speed / Medium Power Switching Transistors
MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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| File Size |
32.50K /
3 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
MBRF760 MBRF50 MBRF735 MBRF745
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| OCR Text |
...idth, f=1.0 KHZ (2) Pulse test: 300ms pulse width, 1% duty cycle (3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient (4) Clip mounting (on case), where lead does not overlap heatsink with 0.110O o... |
| Description |
SCHOTTKY ISOLATED PLASTIC RECTIFIER
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| File Size |
112.74K /
2 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
MBRF2060CT MBRF2035CT MBRF2045CT MBRF2050CT
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| OCR Text |
...width, f=1.0KHZ (2) Pulse test: 300ms pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg (4) Clip mounting (on case), where lead does not overlap heatsink with 0.110O offset. (5) Clip mounting (on case, where le... |
| Description |
SCHOTTKY ISOLATED PLASTIC RECTIFIER
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| File Size |
122.95K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
IRFY340
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| OCR Text |
...tes 1) Pulse Test: Pulse Width 300ms, 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/98
IRFY340
ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
Parameter
BVDSS TJ R... |
| Description |
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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| File Size |
14.66K /
2 Page |
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it Online |
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Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
IRFY1310M-T257
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| OCR Text |
...tes 1) Pulse Test: Pulse Width 300ms, d 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
IRFY1310M-T257
ELECTRICAL CHARACTERISTIC... |
| Description |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
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| File Size |
20.65K /
2 Page |
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it Online |
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