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  20v 0.15a Datasheet PDF File

For 20v 0.15a Found Datasheets File :: 3071    Search Time::1.25ms    
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    IRF6610

IRF[International Rectifier]
Part No. IRF6610
OCR Text ....3nC RDS(on) Qoss 5.9nC 20v max 20v max 5.2m@ 10V 8.2m@ 4.5V Qrr 6.4nC Vgs(th) 2.1V 11nC SQ Applicable DirectFET Outl...0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power ap...
Description HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM

File Size 234.19K  /  9 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4650 IHP10T120
OCR Text ... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 10A 10 none 0.2 2.0 100 nA S 5.0 1.65 1.7 5.8 2.15 6.5 mA 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 62 RthJCD 2.6 RthJC 0.9 K/W Symbol Conditions Max. Value Unit ...
Description Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 331.26K  /  14 Page

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    IRGPC40UD2

International Rectifier
Part No. IRGPC40UD2
OCR Text ...kage current ? ? 100 na v ge = 20v irgpc40ud2 pulse width 80s; duty factor 0.1%. v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 w , ( see fig. 19 ) pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unl...
Description 600V Copack IGBT in a TO-3P (TO-247AC) package

File Size 203.87K  /  8 Page

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    AOB15B60D

Alpha & Omega Semiconductors
Part No. AOB15B60D
OCR Text ...ge =0v, v ce =25v, f=1mhz v ce =20v, i c =15a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v,...0.42 - mj e off - 0.11 - mj e total - 0.53 - mj t rr - 196 - ns q rr - 0.48 - m c i rm - 5.8 - a t d...
Description 600V, 15A Alpha IGBT with Diode

File Size 598.76K  /  9 Page

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    AO4413

ALPHA & OMEGA Semiconductor
ETC
List of Unclassifed Manufacturers
Part No. AO4413
OCR Text ... ID = -15A RDS(ON) < 7m (VGS = -20v) RDS(ON) < 8.5m (VGS = -10V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings ...0.72 -1 -4.2 7 8.7 8.5 -2.6 Min -30 -1 -5 100 -3.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 218.77K  /  6 Page

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    2SK383204 2SK3832

SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
Part No. 2SK383204 2SK3832
OCR Text ...*1 Avalanche Current *2 *1. VDD=20v, L=100H, IAV=30A *2. L100H, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=2...0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS...
Description 30 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 40.43K  /  4 Page

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    Infineon Technologies
Part No. K10T60
OCR Text ...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =10a - 6 - s integrated gate resistor r gint ...0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c(sc) v ge =15v, t...
Description IGBT

File Size 794.51K  /  13 Page

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    FS30SM-5

Mitsubishi Electric Semiconductor
Part No. FS30SM-5
OCR Text ...itions ID = 1mA, VGS = 0V VGS = 20v, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS...0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 69 1.04 18 1250 230 105 25 60 60 50 1.0 -- 95 Max. -- 0.1 0...
Description HIGH-SPEED SWITCHING USE

File Size 41.93K  /  4 Page

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