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SGS Thomson Microelectronics
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Part No. |
AN1165
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OCR Text |
...ramming model the m29f010b is a 1mb (128kb x8) flash memory which can be electrically erased and programmed through special coded command sequences on most standard microprocessor buses. the device is bro- ken down into 8 blocks, each 16 kb... |
Description |
SOFTWARE DRIVERS FOR THE M29F010B AND M29W010B FLASH MEMORIES
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File Size |
125.67K /
25 Page |
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Connect One Semiconductors, Inc.
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Part No. |
CO711AG/66BI-3G
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OCR Text |
...i ? sram: 256kb ? flash: 1mb ? i/o operating range: 2.7v to 3.6v ? external memory bus ? core operating range: 1.65v to 1.95v ? operating humidity: 90% maximum (non-condensing) ? operating temperature range: -40 to ... |
Description |
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File Size |
108.85K /
2 Page |
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http:// STMicroelectronics N.V. 意法半导
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Part No. |
M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70ZA1T M36W216BI70ZA1T -M36W216BI85ZA1T
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OCR Text |
...e. m36w216ti m36w216bi 16 mbit (1mb x16, boot block) flash memory and 2 mbit (128kb x16) sram, multiple memory product features summary multiple memory product C 16 mbit (1mb x 16) boot block flash memory C 2 mbit (128kb x 16) sram supp... |
Description |
16 Mbit 1mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体兆位128KB的x16的SRAM,多个存储产 16 Mbit 1mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽,开机区块快闪记忆体2兆位128KB的x16的SRAM,多个存储产 PV76L14-18P
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File Size |
443.55K /
62 Page |
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it Online |
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EM Microelectronic
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Part No. |
EM9201 EM9202
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OCR Text |
...y design on air data rate: 1mb/s for em9201, configurable 1mb/s or 2mb/s for em9202. programmable rf output level: -20 dbm ? + 4dbm in 8 steps no antenna matching elements needed through appropriate pcb antenna design :... |
Description |
Worlds First Fully Integrated Single-Cell Battery 2.4GHz Transceiver
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File Size |
75.82K /
1 Page |
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it Online |
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STMicroelectronics N.V. 意法半导
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Part No. |
M58MR016-ZCT M58LR016D100ZC6T M58LR016C120ZC6T M58LR016D120ZC6T
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OCR Text |
...e. m58mr016c m58mr016d 16 mbit (1mb x16, mux i/o, dual bank, burst) 1.8v supply flash memory n supply voltage Cv dd = v ddq = 1.7v to 2.0v for program, erase and read Cv pp = 12v for fast program (optional) n multiplexed address/data n s... |
Description |
16 Mbit 1mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 16兆x16插槽,复用的I / O,双行,突发1.8V电源快闪记忆
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File Size |
396.80K /
51 Page |
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it Online |
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