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115ma Datasheet PDF File

For 115ma Found Datasheets File :: 264 Search Time::4.735ms
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				Diodes Incorporated
Part No.	DMN5L06WK-7
OCR Text	... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz @ TC = 25C VGS(th) RDS (ON) ID(ON) \|Yfs\| VSD Ciss Coss Crss 0.49 0.5 200 0.5 1.4 Device mounted on FR-4 PCB. No purposefully added lead. Halo...
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	170.45K / 5 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CTLDM8002A-M621H10
OCR Text	...ON) VGS=5.0V, ID=50mA VGS=0, IS=115ma VGS=10V, ID=500mA VGS=10V, ID=500mA, TJ=125C VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125C MAX 100 1.0 500 500 50 1.0 2.5 1.5 0.15 1.3 2.5 4.0 3.0 5.0 UNITS nA A A mA V V V V V R3 (17-...
Description	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size	416.40K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K6R4016C1D-TL0810 K6R4008C1D-TI10 K6R4016C1D-EC0810 K6R4016C1D-EC10 K6R4016C1D-EI0810 K6R4016C1D-EI10 K6R4016C1D-EL0810 K6R4016C1D-EP0810 K6R4016C1D-TP0810 K6R4016C1D-UL0810 K6R4016C1D-UP0810 K6R4016C1D-JC0810 K6R4008C1D-JC0810 K6R4004C1D-JC0810 K6R4008C1D-UI0810 K6R4016C1D-UI0810 K6R4008C1D-TI0810 K6R4016C1D-TI0810 K6R4016C1D-TI10 K6R4016C1D-KP0810 K6R4016C1D-JP0810 K6R4016C1D-TC0810 K6R4008C1D-TC0810 K6R4008C1D-KI0810 K6R4016C1D-KI0810 K6R4016C1D-JL0810 K6R4016C1D-KL0810 K6R4004C1D-KC0810 K6R4008C1D-KC0810 K6R4016C1D-KC0810 K6R4008C1D-JI0810 K6R4016C1D-JI0810 K6R4008C1D-UC0810 K6R4016C1D-UC0810 K6R4008C1D-UC10 K6R4016C1D-UC10 K6R4008C1D-TC10 K6R4016C1D-TC10 K6R4008C1D-UI10 K6R4016C1D-UI10 K6R4004C1D-JI10 K6R4008C1D-JI10 K6R4016C1D-JI10 K6R4004C1D-KI10 K6R4008C1D-KI10 K6R4008C1D-JC10 K6R4004C1D-KI100810 K6R4004C1D-KC10 K6R4004C1D-JC10 K6R4004C1D-JI100810 K6R4016C1D-KC10 K6R4016C1D-JC10 K6R4016C1D-KI10
OCR Text	...ns 15ns Previous 90mA 80mA 70mA 115ma 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 November, 3. 2001 Remark Preliminary Preliminary ICC(Industrial) ISB ISB1 Rev. 0.2 1. Correct A...
Description	1Mx4 Bit High Speed Static RAM(5.0V Operating)
File Size	216.69K / 9 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM7002DGU
OCR Text	...oltage 2 Test Conditions IS=115ma, VGS=0V Min. - Typ. 0.76 Max. Units 1.5 V Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 11/26/20...
Description	Dual N-channel Enhancement-mode Power MOSFETs
File Size	771.86K / 5 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	2N7002KL-AE2-R 2N7002KG-AE2-R
OCR Text	... Forward Voltage VSD VGS=0V, Is=115ma (Note ) Maximum Pulsed Drain-Source Diode ISM Forward Current Maximum Continuous Drain-Source Diode Is Forward Current Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land ...
Description	300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	156.61K / 3 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMN5L06VK-7 DMN5010VAK-7 L06VAK
OCR Text	... =10V, ID = 0.2A VGS = 0V, IS = 115ma VDS = 25V, VGS = 0V f = 1.0MHz @ TC = 25C VGS(th) RDS (ON) ID(ON) \|Yfs\| VSD Ciss Coss Crss 0.49 0.5 200 0.5 1.4 4. Short duration pulse test used to minimize self-heating e...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	164.61K / 6 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CTLDM7003-M621
OCR Text	...VGS, ID=250A 0.49 VSD VGS=0, IS=115ma rDS(ON) VGS=1.8V, ID=50mA 1.6 rDS(ON) VGS=2.5V, ID=50mA 1.3 rDS(ON) VGS=5.0V, ID=50mA 1.1 gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0...
Description	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size	609.29K / 2 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CTLDM8002A-M621
OCR Text	...VGS=5.0V, ID=50mA VSD VGS=0, IS=115ma rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125C gFS VDS=10V, ID=200mA MAX 100 1.0 500 500 50 1.0 2.5 1.5 0.15 1.3 2.5 4...
Description	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
File Size	606.36K / 2 Page	View it Online	Download Datasheet

				GTM
Part No.	G3018
OCR Text	...ET BVDSS RDS(ON) ID 30V 8 115ma N-channel enhancement-mode MOSFET Package Dimensions &Fast switching speed. &Low voltage drive (2.5V) makes this device ideal for portable equipment. &Easily designed drive circuits. &Easy to p...
Description	N-CHANNEL MOSFET
File Size	345.70K / 4 Page	View it Online	Download Datasheet

				GTM
Part No.	GS3018
OCR Text	...ET BVDSS RDS(ON) ID 30V 8 115ma N-channel enhancement-mode MOSFET Package Dimensions &Fast switching speed. &Low voltage drive (2.5V) makes this device ideal for portable equipment. &Easily designed drive circuits. &Easy to p...
Description	N-CHANNEL MOSFET
File Size	347.88K / 4 Page	View it Online	Download Datasheet

For 115ma Found Datasheets File :: 264 Search Time::4.735ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |